Dependence of Switching Probability on Operation Conditions in GexSe1-x Ovonic Threshold Switching Selectors

Zheng Chai; Weidong Zhang; Robin Degraeve; Sergiu Clima; Firas Hatem; Jian Fu Zhang; Pedro Freitas; John Marsland; Andrea Fantini; Daniele Garbin; Ludovic Goux; Gouri Sankar Kar

doi:10.1109/LED.2019.2924270

Dependence of Switching Probability on Operation Conditions in Ge_xSe_1-x Ovonic Threshold Switching Selectors

Zheng Chai
, Weidong Zhang
, Robin Degraeve
, Sergiu Clima
, Firas Hatem
, Jian Fu Zhang
, Pedro Freitas
, John Marsland
, Andrea Fantini
, Daniele Garbin
, Ludovic Goux
, Gouri Sankar Kar

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Ovonic threshold switching (OTS) selector is a promising candidate to suppress the sneak current paths in resistive switching random access memory (RRAM) arrays. Variations in the threshold voltage (V_th), and the hold voltage (V_hd) have been reported, but a quantitative analysis of the switching probability dependence on the OTS operation conditions is still missing. A novel characterization method is developed in this letter, and the time-to-switch-ON/OFF (t_ONt_OFF) at a constant V_OTS is found following the Weibull distribution, based on which the dependence of switching probability on pulse bias and time can be extracted and extrapolated, and the switching probability can be ensured with appropriately chosen operation conditions. The difference between square and triangle switching pulses is also explained. This provides a practical guidance for predicting the switching probability under different operation conditions and for designing reliable one-selector-one-RRAM (1S1R) arrays.

Original language	English
Article number	8744563
Pages (from-to)	1269-1272
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	8
DOIs	https://doi.org/10.1109/LED.2019.2924270
State	Published - Aug 2019
Externally published	Yes

Keywords

GeSe
ovonic threshold switching (OTS)
probability
resistive switching random access memory (RRAM)
selector

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10.1109/LED.2019.2924270

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title = "Dependence of Switching Probability on Operation Conditions in GexSe1-x Ovonic Threshold Switching Selectors",

abstract = "Ovonic threshold switching (OTS) selector is a promising candidate to suppress the sneak current paths in resistive switching random access memory (RRAM) arrays. Variations in the threshold voltage (Vth), and the hold voltage (Vhd) have been reported, but a quantitative analysis of the switching probability dependence on the OTS operation conditions is still missing. A novel characterization method is developed in this letter, and the time-to-switch-ON/OFF (tONtOFF) at a constant VOTS is found following the Weibull distribution, based on which the dependence of switching probability on pulse bias and time can be extracted and extrapolated, and the switching probability can be ensured with appropriately chosen operation conditions. The difference between square and triangle switching pulses is also explained. This provides a practical guidance for predicting the switching probability under different operation conditions and for designing reliable one-selector-one-RRAM (1S1R) arrays.",

keywords = "GeSe, ovonic threshold switching (OTS), probability, resistive switching random access memory (RRAM), selector",

author = "Zheng Chai and Weidong Zhang and Robin Degraeve and Sergiu Clima and Firas Hatem and Zhang, \{Jian Fu\} and Pedro Freitas and John Marsland and Andrea Fantini and Daniele Garbin and Ludovic Goux and Kar, \{Gouri Sankar\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2019",

month = aug,

doi = "10.1109/LED.2019.2924270",

language = "英语",

volume = "40",

pages = "1269--1272",

journal = "IEEE Electron Device Letters",

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T1 - Dependence of Switching Probability on Operation Conditions in GexSe1-x Ovonic Threshold Switching Selectors

AU - Chai, Zheng

AU - Zhang, Weidong

AU - Degraeve, Robin

AU - Clima, Sergiu

AU - Hatem, Firas

AU - Zhang, Jian Fu

AU - Freitas, Pedro

AU - Marsland, John

AU - Fantini, Andrea

AU - Garbin, Daniele

AU - Goux, Ludovic

AU - Kar, Gouri Sankar

PY - 2019/8

Y1 - 2019/8

N2 - Ovonic threshold switching (OTS) selector is a promising candidate to suppress the sneak current paths in resistive switching random access memory (RRAM) arrays. Variations in the threshold voltage (Vth), and the hold voltage (Vhd) have been reported, but a quantitative analysis of the switching probability dependence on the OTS operation conditions is still missing. A novel characterization method is developed in this letter, and the time-to-switch-ON/OFF (tONtOFF) at a constant VOTS is found following the Weibull distribution, based on which the dependence of switching probability on pulse bias and time can be extracted and extrapolated, and the switching probability can be ensured with appropriately chosen operation conditions. The difference between square and triangle switching pulses is also explained. This provides a practical guidance for predicting the switching probability under different operation conditions and for designing reliable one-selector-one-RRAM (1S1R) arrays.

AB - Ovonic threshold switching (OTS) selector is a promising candidate to suppress the sneak current paths in resistive switching random access memory (RRAM) arrays. Variations in the threshold voltage (Vth), and the hold voltage (Vhd) have been reported, but a quantitative analysis of the switching probability dependence on the OTS operation conditions is still missing. A novel characterization method is developed in this letter, and the time-to-switch-ON/OFF (tONtOFF) at a constant VOTS is found following the Weibull distribution, based on which the dependence of switching probability on pulse bias and time can be extracted and extrapolated, and the switching probability can be ensured with appropriately chosen operation conditions. The difference between square and triangle switching pulses is also explained. This provides a practical guidance for predicting the switching probability under different operation conditions and for designing reliable one-selector-one-RRAM (1S1R) arrays.

KW - GeSe

KW - ovonic threshold switching (OTS)

KW - probability

KW - resistive switching random access memory (RRAM)

KW - selector

UR - https://www.scopus.com/pages/publications/85069857810

U2 - 10.1109/LED.2019.2924270

DO - 10.1109/LED.2019.2924270

M3 - 文章

AN - SCOPUS:85069857810

SN - 0741-3106

VL - 40

SP - 1269

EP - 1272

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

M1 - 8744563

ER -

Dependence of Switching Probability on Operation Conditions in Ge_xSe_1-x Ovonic Threshold Switching Selectors

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Keywords

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