Deflection of wafers and cantilevers with Pt/LNO/PZT/LNO/Pt/Ti/SiO2 multilayered structure

Takeshi Kobayashi; Masaaki Ichiki; Toshihiko Noguchi; Ryutaro Maeda

doi:10.1016/j.tsf.2007.07.067

Deflection of wafers and cantilevers with Pt/LNO/PZT/LNO/Pt/Ti/SiO₂ multilayered structure

Takeshi Kobayashi
, Masaaki Ichiki
, Toshihiko Noguchi
, Ryutaro Maeda

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The present paper describes a Pt/LNO/PZT/LNO/Pt/Ti/SiO₂ multilayers deposited on 4-inch Si wafers. We have evaluated the variation of the deflection of the Si wafers with deposition of each of the thin films. The deposition of the multilayers has resulted in downward deflection (center is higher than edge) of the Si wafers. The multilayers have been also deposited onto SOI wafers and fabricated into piezoelectric micro cantilevers through MEMS bulk micromachining. The micro cantilevers have shown the upward deflection. We have characterized the ferroelectric and piezoelectric properties of the PZT thin films through electrical tests of the micro cantilevers. The dielectric constant, saturation polarization, remanent polarization and coercive field were measured to be 1050, 31.3 μC/cm², 9.1 μC/cm² and 21 kV/cm, respectively. The transverse piezoelectric constant, d₃₁, was measured to be - 110 pm/V from the DC response of the micro cantilevers.

Original language	English
Pages (from-to)	5272-5276
Number of pages	5
Journal	Thin Solid Films
Volume	516
Issue number	16
DOIs	https://doi.org/10.1016/j.tsf.2007.07.067
State	Published - 30 Jun 2008
Externally published	Yes

Keywords

Cantilevers
Deflection
Ferroelectrics
LNO
MEMS
PZT
Piezoelectrics

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10.1016/j.tsf.2007.07.067

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@article{fb3dfc79f2e24c2e90caca045eb7ae92,

title = "Deflection of wafers and cantilevers with Pt/LNO/PZT/LNO/Pt/Ti/SiO2 multilayered structure",

abstract = "The present paper describes a Pt/LNO/PZT/LNO/Pt/Ti/SiO2 multilayers deposited on 4-inch Si wafers. We have evaluated the variation of the deflection of the Si wafers with deposition of each of the thin films. The deposition of the multilayers has resulted in downward deflection (center is higher than edge) of the Si wafers. The multilayers have been also deposited onto SOI wafers and fabricated into piezoelectric micro cantilevers through MEMS bulk micromachining. The micro cantilevers have shown the upward deflection. We have characterized the ferroelectric and piezoelectric properties of the PZT thin films through electrical tests of the micro cantilevers. The dielectric constant, saturation polarization, remanent polarization and coercive field were measured to be 1050, 31.3 μC/cm2, 9.1 μC/cm2 and 21 kV/cm, respectively. The transverse piezoelectric constant, d31, was measured to be - 110 pm/V from the DC response of the micro cantilevers.",

keywords = "Cantilevers, Deflection, Ferroelectrics, LNO, MEMS, PZT, Piezoelectrics",

author = "Takeshi Kobayashi and Masaaki Ichiki and Toshihiko Noguchi and Ryutaro Maeda",

year = "2008",

month = jun,

day = "30",

doi = "10.1016/j.tsf.2007.07.067",

language = "英语",

volume = "516",

pages = "5272--5276",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "16",

}

TY - JOUR

T1 - Deflection of wafers and cantilevers with Pt/LNO/PZT/LNO/Pt/Ti/SiO2 multilayered structure

AU - Kobayashi, Takeshi

AU - Ichiki, Masaaki

AU - Noguchi, Toshihiko

AU - Maeda, Ryutaro

PY - 2008/6/30

Y1 - 2008/6/30

N2 - The present paper describes a Pt/LNO/PZT/LNO/Pt/Ti/SiO2 multilayers deposited on 4-inch Si wafers. We have evaluated the variation of the deflection of the Si wafers with deposition of each of the thin films. The deposition of the multilayers has resulted in downward deflection (center is higher than edge) of the Si wafers. The multilayers have been also deposited onto SOI wafers and fabricated into piezoelectric micro cantilevers through MEMS bulk micromachining. The micro cantilevers have shown the upward deflection. We have characterized the ferroelectric and piezoelectric properties of the PZT thin films through electrical tests of the micro cantilevers. The dielectric constant, saturation polarization, remanent polarization and coercive field were measured to be 1050, 31.3 μC/cm2, 9.1 μC/cm2 and 21 kV/cm, respectively. The transverse piezoelectric constant, d31, was measured to be - 110 pm/V from the DC response of the micro cantilevers.

AB - The present paper describes a Pt/LNO/PZT/LNO/Pt/Ti/SiO2 multilayers deposited on 4-inch Si wafers. We have evaluated the variation of the deflection of the Si wafers with deposition of each of the thin films. The deposition of the multilayers has resulted in downward deflection (center is higher than edge) of the Si wafers. The multilayers have been also deposited onto SOI wafers and fabricated into piezoelectric micro cantilevers through MEMS bulk micromachining. The micro cantilevers have shown the upward deflection. We have characterized the ferroelectric and piezoelectric properties of the PZT thin films through electrical tests of the micro cantilevers. The dielectric constant, saturation polarization, remanent polarization and coercive field were measured to be 1050, 31.3 μC/cm2, 9.1 μC/cm2 and 21 kV/cm, respectively. The transverse piezoelectric constant, d31, was measured to be - 110 pm/V from the DC response of the micro cantilevers.

KW - Cantilevers

KW - Deflection

KW - Ferroelectrics

KW - LNO

KW - MEMS

KW - PZT

KW - Piezoelectrics

UR - https://www.scopus.com/pages/publications/43949111624

U2 - 10.1016/j.tsf.2007.07.067

DO - 10.1016/j.tsf.2007.07.067

M3 - 文章

AN - SCOPUS:43949111624

SN - 0040-6090

VL - 516

SP - 5272

EP - 5276

JO - Thin Solid Films

JF - Thin Solid Films

IS - 16

ER -

Deflection of wafers and cantilevers with Pt/LNO/PZT/LNO/Pt/Ti/SiO₂ multilayered structure

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Keywords

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