Defect-induced color-tunable monolithic GaN-based light-emitting diodes

Yaping Huang; Feng Yun; Yufeng Li; Wen Ding; Yue Wang; Hong Wang; Weihan Zhang; Ye Zhang; Maofeng Guo; Shuo Liu; Xun Hou

doi:10.7567/APEX.7.102102

Defect-induced color-tunable monolithic GaN-based light-emitting diodes

Yaping Huang
, Feng Yun
, Yufeng Li
, Wen Ding
, Yue Wang
, Hong Wang
, Weihan Zhang
, Ye Zhang
, Maofeng Guo
, Shuo Liu
, Xun Hou

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We have demonstrated defect-induced color-tunable monolithic GaN-based vertical light-emitting diodes (VLEDs). With Ag nanorod arrays embedded in p-GaN, large numbers of Ga vacancies (V_Ga) were produced during the thermal bonding process in VLED fabrication. V_Ga-related donor-acceptor pair (DAP) transitions in p-GaN resulted in red emission in photoluminescence (PL) measurements as well as a broad electroluminescence (EL) emission spectrum extending from green to red. In combination with high-emission-efficiency blue InGaN/GaN multiple quantum wells (MQWs), the emission color of VLEDs can be changed from red to white by increasing the injection current.

Original language	English
Article number	102102
Journal	Applied Physics Express
Volume	7
Issue number	10
DOIs	https://doi.org/10.7567/APEX.7.102102
State	Published - 1 Oct 2014

Access to Document

10.7567/APEX.7.102102

Cite this

@article{b4e1e241ba7b491795cb0fe8c1be2ffb,

title = "Defect-induced color-tunable monolithic GaN-based light-emitting diodes",

abstract = "We have demonstrated defect-induced color-tunable monolithic GaN-based vertical light-emitting diodes (VLEDs). With Ag nanorod arrays embedded in p-GaN, large numbers of Ga vacancies (VGa) were produced during the thermal bonding process in VLED fabrication. VGa-related donor-acceptor pair (DAP) transitions in p-GaN resulted in red emission in photoluminescence (PL) measurements as well as a broad electroluminescence (EL) emission spectrum extending from green to red. In combination with high-emission-efficiency blue InGaN/GaN multiple quantum wells (MQWs), the emission color of VLEDs can be changed from red to white by increasing the injection current.",

author = "Yaping Huang and Feng Yun and Yufeng Li and Wen Ding and Yue Wang and Hong Wang and Weihan Zhang and Ye Zhang and Maofeng Guo and Shuo Liu and Xun Hou",

note = "Publisher Copyright: {\textcopyright} 2014 The Japan Society of Applied Physics.",

year = "2014",

month = oct,

day = "1",

doi = "10.7567/APEX.7.102102",

language = "英语",

volume = "7",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "10",

}

TY - JOUR

T1 - Defect-induced color-tunable monolithic GaN-based light-emitting diodes

AU - Huang, Yaping

AU - Yun, Feng

AU - Li, Yufeng

AU - Ding, Wen

AU - Wang, Yue

AU - Wang, Hong

AU - Zhang, Weihan

AU - Zhang, Ye

AU - Guo, Maofeng

AU - Liu, Shuo

AU - Hou, Xun

PY - 2014/10/1

Y1 - 2014/10/1

N2 - We have demonstrated defect-induced color-tunable monolithic GaN-based vertical light-emitting diodes (VLEDs). With Ag nanorod arrays embedded in p-GaN, large numbers of Ga vacancies (VGa) were produced during the thermal bonding process in VLED fabrication. VGa-related donor-acceptor pair (DAP) transitions in p-GaN resulted in red emission in photoluminescence (PL) measurements as well as a broad electroluminescence (EL) emission spectrum extending from green to red. In combination with high-emission-efficiency blue InGaN/GaN multiple quantum wells (MQWs), the emission color of VLEDs can be changed from red to white by increasing the injection current.

AB - We have demonstrated defect-induced color-tunable monolithic GaN-based vertical light-emitting diodes (VLEDs). With Ag nanorod arrays embedded in p-GaN, large numbers of Ga vacancies (VGa) were produced during the thermal bonding process in VLED fabrication. VGa-related donor-acceptor pair (DAP) transitions in p-GaN resulted in red emission in photoluminescence (PL) measurements as well as a broad electroluminescence (EL) emission spectrum extending from green to red. In combination with high-emission-efficiency blue InGaN/GaN multiple quantum wells (MQWs), the emission color of VLEDs can be changed from red to white by increasing the injection current.

UR - https://www.scopus.com/pages/publications/84907392857

U2 - 10.7567/APEX.7.102102

DO - 10.7567/APEX.7.102102

M3 - 文章

AN - SCOPUS:84907392857

SN - 1882-0778

VL - 7

JO - Applied Physics Express

JF - Applied Physics Express

IS - 10

M1 - 102102

ER -

Defect-induced color-tunable monolithic GaN-based light-emitting diodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this