Datasheet-Driven Non-segmented SPICE Model of SiC MOSFET With Improved Accuracy

In recent years, SiC MOSFETs have experienced rapid advancements, driven by the growing demand for high-efficiency power devices in applications such as electric vehicles, renewable energy, and industrial automation. To achieve more accurate circuit simulations, a precise and robust SPICE model is essential. Although device manufacturers usually provide simplified SPICE models, the accuracy is insufficient to meet the simulation requirements. This paper proposes a data table-driven compact model for SiC MOSFETs, in which both static and C-V characteristics are accurately described by non-segment equations. Compared to the SPICE models provided by manufacturers, the model is characterized by the use of non-piecewise equations to describe its behavior, which enhances its convergence in simulations. Additionally, considering the different characteristics between high current and low current regions, the original EKV model is modified to improve the accuracy, and the third quadrant characteristics are modeled independently, making it more consistent with the device's actual behavior in practical circuits.