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CsCu5Se3: A Copper-Rich Ternary Chalcogenide Semiconductor with Nearly Direct Band Gap for Photovoltaic Application

  • Zhiguo Xia
  • , Huajing Fang
  • , Xiuwen Zhang
  • , Maxim S. Molokeev
  • , Romain Gautier
  • , Qingfeng Yan
  • , Su Huai Wei
  • , Kenneth R. Poeppelmeier
  • University of Science and Technology Beijing
  • Tsinghua University
  • Shenzhen University
  • Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
  • Far Eastern State Transport University
  • Siberian Federal University
  • Nantes Université
  • China Academy of Engineering Physics
  • Northwestern University

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

Discovery of new semiconductor candidates with suitable band gaps is a challenge for optoelectronic application. A facile solvothermal synthesis of a new ternary chalcogenide semiconductor CsCu5Se3 is reported. The telluride CsCu5Te3 is also predicted to be stable. CsCu5Se3 is isostructural with CsCu5S3 (space group Pmma). The band gap calculations of these chalcogenide semiconductors using hybrid density functional theory indicate nearly direct band gaps, and their values (about 1.4 eV) were confirmed by the optical absorption spectroscopy. These alkali metal copper chalcogenides are interesting examples of copper-rich structures which are commonly associated with favorable photovoltaic application.

Original languageEnglish
Pages (from-to)1121-1126
Number of pages6
JournalChemistry of Materials
Volume30
Issue number3
DOIs
StatePublished - 13 Feb 2018
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

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