Cryogenic characterization and modeling of silicon superjunction mosfet for power loss estimation

This paper presents a simplified semiconductor device characterization technique at cryogenic temperatures. A commercial silicon superjunction MOSFET (650V CoolMOS™) has been characterized for the DC output, Transfer, and Capacitance-Voltage (C-V) characteristics. The results obtained have been utilized to model the device with an industry standard compact model provided by Saber™. A temperature binning approach has been taken to incorporate the lower temperature behaviors of the device. This model incorporates the non-linear internal capacitance, body diode, and the gate resistance. The model has been used to investigate the merit of using the selected silicon power device at cryogenic temperatures by simulating conduction losses and overall energy losses of a typical buck converter and a 5-level cascaded H-Bridge inverter. From these system-level simulations, it can be beneficial to compare the performance of the power switches for applications like future high efficiency, low emission aviation.