Creation and Migration of Intrinsic Defects in Si-Doped Diamond Produced Using Microwave Plasma Chemical Vapor Deposition

Kaiyue Wang; Senchuan Ding; Yufei Zhang; Hong Xing Wang; Yuming Tian; Yingmin Wang; Yuesheng Chai

doi:10.1002/pssa.201900003

Creation and Migration of Intrinsic Defects in Si-Doped Diamond Produced Using Microwave Plasma Chemical Vapor Deposition

Kaiyue Wang
, Senchuan Ding
, Yufei Zhang
, Hong Xing Wang
, Yuming Tian
, Yingmin Wang
, Yuesheng Chai

Faculty of Electronic and Information Engineering

Taiyuan University of Science and Technology
Shanxi Enginerring Vocational College
The Second Research Institute of China Electronic Technology Group

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this study, low temperature micro-photoluminescence technology is used to investigate the development and migration of intrinsic defects in Si-doped diamond. The results demonstrate that NV and Si-V luminescence are weakened due to the recombination of self-interstitials created by electron irradiation in diamond. After annealing at high temperatures, interstitial-related centers disappear and the vacancy migrate significant distances to isolated N and Si atoms for conversion into NV and Si-V centers.

Original language	English
Article number	1900003
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	216
Issue number	11
DOIs	https://doi.org/10.1002/pssa.201900003
State	Published - 5 Jun 2019

Keywords

Si-doped
annealing
irradiation
migration

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10.1002/pssa.201900003

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title = "Creation and Migration of Intrinsic Defects in Si-Doped Diamond Produced Using Microwave Plasma Chemical Vapor Deposition",

abstract = "In this study, low temperature micro-photoluminescence technology is used to investigate the development and migration of intrinsic defects in Si-doped diamond. The results demonstrate that NV and Si-V luminescence are weakened due to the recombination of self-interstitials created by electron irradiation in diamond. After annealing at high temperatures, interstitial-related centers disappear and the vacancy migrate significant distances to isolated N and Si atoms for conversion into NV and Si-V centers.",

keywords = "Si-doped, annealing, irradiation, migration",

author = "Kaiyue Wang and Senchuan Ding and Yufei Zhang and Wang, \{Hong Xing\} and Yuming Tian and Yingmin Wang and Yuesheng Chai",

note = "Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2019",

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doi = "10.1002/pssa.201900003",

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TY - JOUR

T1 - Creation and Migration of Intrinsic Defects in Si-Doped Diamond Produced Using Microwave Plasma Chemical Vapor Deposition

AU - Wang, Kaiyue

AU - Ding, Senchuan

AU - Zhang, Yufei

AU - Wang, Hong Xing

AU - Tian, Yuming

AU - Wang, Yingmin

AU - Chai, Yuesheng

PY - 2019/6/5

Y1 - 2019/6/5

N2 - In this study, low temperature micro-photoluminescence technology is used to investigate the development and migration of intrinsic defects in Si-doped diamond. The results demonstrate that NV and Si-V luminescence are weakened due to the recombination of self-interstitials created by electron irradiation in diamond. After annealing at high temperatures, interstitial-related centers disappear and the vacancy migrate significant distances to isolated N and Si atoms for conversion into NV and Si-V centers.

AB - In this study, low temperature micro-photoluminescence technology is used to investigate the development and migration of intrinsic defects in Si-doped diamond. The results demonstrate that NV and Si-V luminescence are weakened due to the recombination of self-interstitials created by electron irradiation in diamond. After annealing at high temperatures, interstitial-related centers disappear and the vacancy migrate significant distances to isolated N and Si atoms for conversion into NV and Si-V centers.

KW - Si-doped

KW - annealing

KW - irradiation

KW - migration

UR - https://www.scopus.com/pages/publications/85063948448

U2 - 10.1002/pssa.201900003

DO - 10.1002/pssa.201900003

M3 - 文章

AN - SCOPUS:85063948448

SN - 1862-6300

VL - 216

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 11

M1 - 1900003

ER -

Creation and Migration of Intrinsic Defects in Si-Doped Diamond Produced Using Microwave Plasma Chemical Vapor Deposition

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Keywords

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