Correction: Interface-engineered reliable HfO2-based RRAM for synaptic simulation (Journal of Materials Chemistry C (2019) DOI: 10.1039/c9tc04880d)

Qiang Wang; Gang Niu; Sourav Roy; Yankun Wang; Yijun Zhang; Heping Wu; Shijie Zhai; Wei Bai; Peng Shi; Sannian Song; Zhitang Song; Ya Hong Xie; Zuo Guang Ye; Christian Wenger; Xiangjian Meng; Wei Ren

doi:10.1039/c9tc90222h

Correction: Interface-engineered reliable HfO₂-based RRAM for synaptic simulation (Journal of Materials Chemistry C (2019) DOI: 10.1039/c9tc04880d)

Qiang Wang
, Gang Niu
, Sourav Roy
, Yankun Wang
, Yijun Zhang
, Heping Wu
, Shijie Zhai
, Wei Bai
, Peng Shi
, Sannian Song
, Zhitang Song
, Ya Hong Xie
, Zuo Guang Ye
, Christian Wenger
, Xiangjian Meng
, Wei Ren

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University
CAS - Shanghai Institute of Microsystem and Information Technology
University of California at Los Angeles
Simon Fraser University
Innovations for High Performance Microelectronics
CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Comment/debate

1 Scopus citations

Abstract

There was an error in the author list of this published article. The corresponding authors for this paper are Gang Niu (gangniu@xjtu.edu.cn) and Wei Ren (wren@mail.xjtu.edu.cn). The footnote indicating that Qiang Wang and Gang Niu contributed equally to the work was not intended. The corrected author list and notations are shown here. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

Original language	English
Pages (from-to)	13307
Number of pages	1
Journal	Journal of Materials Chemistry C
Volume	7
Issue number	42
DOIs	https://doi.org/10.1039/c9tc90222h
State	Published - 2019

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10.1039/c9tc90222h

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Wang, Q., Niu, G., Roy, S., Wang, Y., Zhang, Y., Wu, H., Zhai, S., Bai, W., Shi, P., Song, S., Song, Z., Xie, Y. H., Ye, Z. G., Wenger, C., Meng, X., & Ren, W. (2019). Correction: Interface-engineered reliable HfO₂-based RRAM for synaptic simulation (Journal of Materials Chemistry C (2019) DOI: 10.1039/c9tc04880d). Journal of Materials Chemistry C, 7(42), 13307. https://doi.org/10.1039/c9tc90222h

@article{799d79880c9d413cbe918484fb6ef14b,

title = "Correction: Interface-engineered reliable HfO2-based RRAM for synaptic simulation (Journal of Materials Chemistry C (2019) DOI: 10.1039/c9tc04880d)",

abstract = "There was an error in the author list of this published article. The corresponding authors for this paper are Gang Niu (gangniu@xjtu.edu.cn) and Wei Ren (wren@mail.xjtu.edu.cn). The footnote indicating that Qiang Wang and Gang Niu contributed equally to the work was not intended. The corrected author list and notations are shown here. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.",

author = "Qiang Wang and Gang Niu and Sourav Roy and Yankun Wang and Yijun Zhang and Heping Wu and Shijie Zhai and Wei Bai and Peng Shi and Sannian Song and Zhitang Song and Xie, \{Ya Hong\} and Ye, \{Zuo Guang\} and Christian Wenger and Xiangjian Meng and Wei Ren",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2019.",

year = "2019",

doi = "10.1039/c9tc90222h",

language = "英语",

volume = "7",

pages = "13307",

journal = "Journal of Materials Chemistry C",

issn = "2050-7534",

publisher = "Royal Society of Chemistry",

number = "42",

}

Wang, Q, Niu, G, Roy, S, Wang, Y, Zhang, Y, Wu, H, Zhai, S, Bai, W, Shi, P, Song, S, Song, Z, Xie, YH, Ye, ZG, Wenger, C, Meng, X & Ren, W 2019, 'Correction: Interface-engineered reliable HfO₂-based RRAM for synaptic simulation (Journal of Materials Chemistry C (2019) DOI: 10.1039/c9tc04880d)', Journal of Materials Chemistry C, vol. 7, no. 42, pp. 13307. https://doi.org/10.1039/c9tc90222h

TY - JOUR

T1 - Correction

T2 - Interface-engineered reliable HfO2-based RRAM for synaptic simulation (Journal of Materials Chemistry C (2019) DOI: 10.1039/c9tc04880d)

AU - Wang, Qiang

AU - Niu, Gang

AU - Roy, Sourav

AU - Wang, Yankun

AU - Zhang, Yijun

AU - Wu, Heping

AU - Zhai, Shijie

AU - Bai, Wei

AU - Shi, Peng

AU - Song, Sannian

AU - Song, Zhitang

AU - Xie, Ya Hong

AU - Ye, Zuo Guang

AU - Wenger, Christian

AU - Meng, Xiangjian

AU - Ren, Wei

PY - 2019

Y1 - 2019

N2 - There was an error in the author list of this published article. The corresponding authors for this paper are Gang Niu (gangniu@xjtu.edu.cn) and Wei Ren (wren@mail.xjtu.edu.cn). The footnote indicating that Qiang Wang and Gang Niu contributed equally to the work was not intended. The corrected author list and notations are shown here. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

AB - There was an error in the author list of this published article. The corresponding authors for this paper are Gang Niu (gangniu@xjtu.edu.cn) and Wei Ren (wren@mail.xjtu.edu.cn). The footnote indicating that Qiang Wang and Gang Niu contributed equally to the work was not intended. The corrected author list and notations are shown here. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

UR - https://www.scopus.com/pages/publications/85074409570

U2 - 10.1039/c9tc90222h

DO - 10.1039/c9tc90222h

M3 - 评论/辩论

AN - SCOPUS:85074409570

SN - 2050-7534

VL - 7

SP - 13307

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 42

ER -

Correction: Interface-engineered reliable HfO₂-based RRAM for synaptic simulation (Journal of Materials Chemistry C (2019) DOI: 10.1039/c9tc04880d)

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