Computational investigation of InxGa1-xN/InN quantum-dot intermediate-band solar cell

  • Qing Wen Deng
  • , Xiao Liang Wang
  • , Cui Bai Yang
  • , Hong Ling Xiao
  • , Cui Mei Wang
  • , Hai Bo Yin
  • , Qi Feng Hou
  • , Yang Bi
  • , Jin Min Li
  • , Zhan Guo Wang
  • , Xun Hou

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

An InxGa1-xN/InN quantum-dot intermediate-band solar cell is calculated by means of solving the Schrödinger equation according to the Kronig-Penney model. Based on particular assumptions, the power conversion efficiency is worked out. The results reveal that the In xGa1-xN/InN quantum-dot intermediate-band solar cell manifests much larger power conversion efficiency than that of p-n junction solar cells, and the power conversion efficiency strongly depends on the size of the quantum dot and the interdot distance.

Original languageEnglish
Article number018401
JournalChinese Physics Letters
Volume28
Issue number1
DOIs
StatePublished - Jan 2011
Externally publishedYes

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