Skip to main navigation Skip to search Skip to main content

Comprehensive Investigations on Paralleling Operation of SiC MOSFETs based on Subcircuit Model in MATLAB/SIMULINK

  • Yuqi Wei
  • , Dereje Woldegiorgis
  • , Xia Du
  • , Venkata Samhitha MacHireddy
  • , Alan Mantooth
  • University of Arkansas, Fayetteville

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Wide band gap (WBG) devices have been widely applied in industrial applications owning to their advantages of low switching loss, low on-stage voltage drop, and high operating temperature. Paralleling operation of power devices/modules is attractive due to its cost-effective and high power characteristics. In applications require very high current capability, paralleling operation of off-the-shelf power devices/modules becomes the only choice. However, current balancing operation of individual power device/module becomes difficult due to the differences of circuit parasitics. To investigate the device/module and circuit parasitics influences on the current sharing performance, in this article, a subcircuit model was built in MATLAB. Comprehensive comparisons and analysis are performed, which can provide guidance for engineers when designing the system with paralleling devices/modules. Moreover, the solutions to achieve current balancing operating are proposed with the aid of active gate driver. Experiment results are presented and analyzed to validate the effectiveness of current sharing solutions.

Original languageEnglish
Title of host publicationIEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages171-178
Number of pages8
ISBN (Electronic)9781665418515
DOIs
StatePublished - 2021
Externally publishedYes
Event2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021 - Wuhan, China
Duration: 25 Aug 202127 Aug 2021

Publication series

NameIEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021

Conference

Conference2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021
Country/TerritoryChina
CityWuhan
Period25/08/2127/08/21

Keywords

  • Wide band gap
  • active gate driving
  • circuit parasitics
  • current sharing

Fingerprint

Dive into the research topics of 'Comprehensive Investigations on Paralleling Operation of SiC MOSFETs based on Subcircuit Model in MATLAB/SIMULINK'. Together they form a unique fingerprint.

Cite this