Comparison studies of excitonic properties and multiphoton absorption of near-infrared-I-emitting Cu-doped InP and InP/ZnSe nanocrystals

Tingchao He; Huan Liu; Junzi Li; Shuyu Xiao; Wenbo Hu; Xin Qiu; Xiaodong Lin; Yang Gao

doi:10.1364/OL.384876

Comparison studies of excitonic properties and multiphoton absorption of near-infrared-I-emitting Cu-doped InP and InP/ZnSe nanocrystals

Tingchao He
, Huan Liu
, Junzi Li
, Shuyu Xiao
, Wenbo Hu
, Xin Qiu
, Xiaodong Lin
, Yang Gao

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Cu-doped InP (Cu:InP) and InP/ZnSe nanocrystals (NCs) with near-infrared-I (NIR-I) emission were prepared and characterized. Femtosecond transient absorption spectra revealed that the epitaxial growth of a ZnSe diffusion barrier onto the Cu:InP core can amplify its exciton-dopant coupling strength, with the energy transfer times of ∼ 220 ps for Cu:InP NCs and ∼ 183 ps for Cu:InP/ZnSe NCs. Importantly, the Cu:InP/ZnSe NCs exhibit much larger two- and three-photon absorption cross sections, reaching ∼ 10162 GM at 1030 nm and ∼ 1.06 × 10⁻⁷⁷ cm⁶ s² photon⁻² at 1600 nm, compared with Cu:InP NCs.

Original language	English
Pages (from-to)	1350-1353
Number of pages	4
Journal	Optics Letters
Volume	45
Issue number	6
DOIs	https://doi.org/10.1364/OL.384876
State	Published - 15 Mar 2020
Externally published	Yes

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@article{9e8f2f2fe70a4367a9201b9d6a10e706,

title = "Comparison studies of excitonic properties and multiphoton absorption of near-infrared-I-emitting Cu-doped InP and InP/ZnSe nanocrystals",

abstract = "Cu-doped InP (Cu:InP) and InP/ZnSe nanocrystals (NCs) with near-infrared-I (NIR-I) emission were prepared and characterized. Femtosecond transient absorption spectra revealed that the epitaxial growth of a ZnSe diffusion barrier onto the Cu:InP core can amplify its exciton-dopant coupling strength, with the energy transfer times of ∼ 220 ps for Cu:InP NCs and ∼ 183 ps for Cu:InP/ZnSe NCs. Importantly, the Cu:InP/ZnSe NCs exhibit much larger two- and three-photon absorption cross sections, reaching ∼ 10162 GM at 1030 nm and ∼ 1.06 × 10−77 cm6 s2 photon−2 at 1600 nm, compared with Cu:InP NCs.",

author = "Tingchao He and Huan Liu and Junzi Li and Shuyu Xiao and Wenbo Hu and Xin Qiu and Xiaodong Lin and Yang Gao",

note = "Publisher Copyright: {\textcopyright} 2020 Optical Society of America",

year = "2020",

month = mar,

day = "15",

doi = "10.1364/OL.384876",

language = "英语",

volume = "45",

pages = "1350--1353",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "Optica Publishing Group (formerly OSA)",

number = "6",

}

TY - JOUR

T1 - Comparison studies of excitonic properties and multiphoton absorption of near-infrared-I-emitting Cu-doped InP and InP/ZnSe nanocrystals

AU - He, Tingchao

AU - Liu, Huan

AU - Li, Junzi

AU - Xiao, Shuyu

AU - Hu, Wenbo

AU - Qiu, Xin

AU - Lin, Xiaodong

AU - Gao, Yang

PY - 2020/3/15

Y1 - 2020/3/15

N2 - Cu-doped InP (Cu:InP) and InP/ZnSe nanocrystals (NCs) with near-infrared-I (NIR-I) emission were prepared and characterized. Femtosecond transient absorption spectra revealed that the epitaxial growth of a ZnSe diffusion barrier onto the Cu:InP core can amplify its exciton-dopant coupling strength, with the energy transfer times of ∼ 220 ps for Cu:InP NCs and ∼ 183 ps for Cu:InP/ZnSe NCs. Importantly, the Cu:InP/ZnSe NCs exhibit much larger two- and three-photon absorption cross sections, reaching ∼ 10162 GM at 1030 nm and ∼ 1.06 × 10−77 cm6 s2 photon−2 at 1600 nm, compared with Cu:InP NCs.

AB - Cu-doped InP (Cu:InP) and InP/ZnSe nanocrystals (NCs) with near-infrared-I (NIR-I) emission were prepared and characterized. Femtosecond transient absorption spectra revealed that the epitaxial growth of a ZnSe diffusion barrier onto the Cu:InP core can amplify its exciton-dopant coupling strength, with the energy transfer times of ∼ 220 ps for Cu:InP NCs and ∼ 183 ps for Cu:InP/ZnSe NCs. Importantly, the Cu:InP/ZnSe NCs exhibit much larger two- and three-photon absorption cross sections, reaching ∼ 10162 GM at 1030 nm and ∼ 1.06 × 10−77 cm6 s2 photon−2 at 1600 nm, compared with Cu:InP NCs.

UR - https://www.scopus.com/pages/publications/85081412729

U2 - 10.1364/OL.384876

DO - 10.1364/OL.384876

M3 - 文章

C2 - 32163963

AN - SCOPUS:85081412729

SN - 0146-9592

VL - 45

SP - 1350

EP - 1353

JO - Optics Letters

JF - Optics Letters

IS - 6

ER -

Comparison studies of excitonic properties and multiphoton absorption of near-infrared-I-emitting Cu-doped InP and InP/ZnSe nanocrystals

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