Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices

Ru Zhang; Wenjie Chen; Yu Xuan Chen; Yue Cao; Ruitao Yan; Xu Yang

doi:10.1109/WiPDAAsia51810.2021.9656069

Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices

Ru Zhang
, Wenjie Chen
, Yu Xuan Chen
, Yue Cao
, Ruitao Yan
, Xu Yang

School of Electrical Engineering

Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Wide bandgap (WBG) devices are widely used in power electronics. However, it brings electromagnetic interference (EMI) problems. To compare the EMI generated by wide bandgap (WBG) devices and Si counterparts, a datasheet-based method predicting the EMI of different devices is proposed here. What's more, a parameter n is defined to analyze and compare the EMI of Si, SiC and GaN on high-frequency. The result reveals that the larger n is, the more serious effect of it on EMI. The DPT experiments were carried out, which verified the accuracy of the above analysis.

Original language	English
Title of host publication	IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	123-126
Number of pages	4
ISBN (Electronic)	9781665418515
DOIs	https://doi.org/10.1109/WiPDAAsia51810.2021.9656069
State	Published - 2021
Event	2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021 - Wuhan, China Duration: 25 Aug 2021 → 27 Aug 2021

Publication series

Name	IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021

Conference

Conference	2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021
Country/Territory	China
City	Wuhan
Period	25/08/21 → 27/08/21

Keywords

Electromagnetic interference (EMI)
gallium nitride (GaN)
reverse conduction
silicon carbide (SiC)

Access to Document

10.1109/WiPDAAsia51810.2021.9656069

Cite this

Zhang, R., Chen, W., Chen, Y. X., Cao, Y., Yan, R., & Yang, X. (2021). Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021 (pp. 123-126). (IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia51810.2021.9656069

Zhang, Ru ; Chen, Wenjie ; Chen, Yu Xuan et al. / Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices. IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 123-126 (IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021).

@inproceedings{09186d4b010c4d9ab038bcc1ed2ba7d9,

title = "Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices",

abstract = "Wide bandgap (WBG) devices are widely used in power electronics. However, it brings electromagnetic interference (EMI) problems. To compare the EMI generated by wide bandgap (WBG) devices and Si counterparts, a datasheet-based method predicting the EMI of different devices is proposed here. What's more, a parameter n is defined to analyze and compare the EMI of Si, SiC and GaN on high-frequency. The result reveals that the larger n is, the more serious effect of it on EMI. The DPT experiments were carried out, which verified the accuracy of the above analysis.",

keywords = "Electromagnetic interference (EMI), gallium nitride (GaN), reverse conduction, silicon carbide (SiC)",

author = "Ru Zhang and Wenjie Chen and Chen, \{Yu Xuan\} and Yue Cao and Ruitao Yan and Xu Yang",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021 ; Conference date: 25-08-2021 Through 27-08-2021",

year = "2021",

doi = "10.1109/WiPDAAsia51810.2021.9656069",

language = "英语",

series = "IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "123--126",

booktitle = "IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021",

}

Zhang, R, Chen, W, Chen, YX, Cao, Y, Yan, R & Yang, X 2021, Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices. in IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021. IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021, Institute of Electrical and Electronics Engineers Inc., pp. 123-126, 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021, Wuhan, China, 25/08/21. https://doi.org/10.1109/WiPDAAsia51810.2021.9656069

Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices. / Zhang, Ru; Chen, Wenjie; Chen, Yu Xuan et al.
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 123-126 (IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices

AU - Zhang, Ru

AU - Chen, Wenjie

AU - Chen, Yu Xuan

AU - Cao, Yue

AU - Yan, Ruitao

AU - Yang, Xu

PY - 2021

Y1 - 2021

N2 - Wide bandgap (WBG) devices are widely used in power electronics. However, it brings electromagnetic interference (EMI) problems. To compare the EMI generated by wide bandgap (WBG) devices and Si counterparts, a datasheet-based method predicting the EMI of different devices is proposed here. What's more, a parameter n is defined to analyze and compare the EMI of Si, SiC and GaN on high-frequency. The result reveals that the larger n is, the more serious effect of it on EMI. The DPT experiments were carried out, which verified the accuracy of the above analysis.

AB - Wide bandgap (WBG) devices are widely used in power electronics. However, it brings electromagnetic interference (EMI) problems. To compare the EMI generated by wide bandgap (WBG) devices and Si counterparts, a datasheet-based method predicting the EMI of different devices is proposed here. What's more, a parameter n is defined to analyze and compare the EMI of Si, SiC and GaN on high-frequency. The result reveals that the larger n is, the more serious effect of it on EMI. The DPT experiments were carried out, which verified the accuracy of the above analysis.

KW - Electromagnetic interference (EMI)

KW - gallium nitride (GaN)

KW - reverse conduction

KW - silicon carbide (SiC)

UR - https://www.scopus.com/pages/publications/85124798183

U2 - 10.1109/WiPDAAsia51810.2021.9656069

DO - 10.1109/WiPDAAsia51810.2021.9656069

M3 - 会议稿件

AN - SCOPUS:85124798183

T3 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021

SP - 123

EP - 126

BT - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021

Y2 - 25 August 2021 through 27 August 2021

ER -

Zhang R, Chen W, Chen YX, Cao Y, Yan R, Yang X. Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 123-126. (IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021). doi: 10.1109/WiPDAAsia51810.2021.9656069

Comparison of the Influence of Reverse Conduction on EMI of WBG and Si Devices

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