TY - GEN
T1 - Comparative Analysis on Insulation Degradation Characteristics of Two Commercial Silicone Gels
AU - Jiang, Xinyu
AU - Li, Kaixuan
AU - Yang, Ziyue
AU - Zhang, Boya
AU - Li, Xingwen
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Silicone gels have been widely used as an encapsulation for power electronics modules, and their own insulation performance directly determines the voltage resistance reliability of electronic devices such as IGBT devices. Electrical treeing in two different silicone gels has been investigated using a typical pin-plane geometry. The purpose of this study was to investigate the difference in the electrical tree growth characteristics of two different commercial silicone gels under AC voltage. The bifurcation voltage is defined in this paper, and the electrical tree in each silicone gel grows at its respective bifurcation voltage. Combined with the data results of electrical tree growth rate, expansion coefficient, fractal dimension and accumulated damage, the insulation degradation characteristics of two silicone gels can be compared and analyzed.
AB - Silicone gels have been widely used as an encapsulation for power electronics modules, and their own insulation performance directly determines the voltage resistance reliability of electronic devices such as IGBT devices. Electrical treeing in two different silicone gels has been investigated using a typical pin-plane geometry. The purpose of this study was to investigate the difference in the electrical tree growth characteristics of two different commercial silicone gels under AC voltage. The bifurcation voltage is defined in this paper, and the electrical tree in each silicone gel grows at its respective bifurcation voltage. Combined with the data results of electrical tree growth rate, expansion coefficient, fractal dimension and accumulated damage, the insulation degradation characteristics of two silicone gels can be compared and analyzed.
UR - https://www.scopus.com/pages/publications/85146924350
U2 - 10.1109/ICHVE53725.2022.10014508
DO - 10.1109/ICHVE53725.2022.10014508
M3 - 会议稿件
AN - SCOPUS:85146924350
T3 - 2022 IEEE International Conference on High Voltage Engineering and Applications, ICHVE 2022
BT - 2022 IEEE International Conference on High Voltage Engineering and Applications, ICHVE 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Conference on High Voltage Engineering and Applications, ICHVE 2022
Y2 - 25 September 2022 through 29 September 2022
ER -