Colossal breakdown electric field and dielectric response of Al-doped CaCu3Ti4O12 ceramics

Ran Jia; Xuetong Zhao; Jianying Li; Xian Tang

doi:10.1016/j.mseb.2014.02.015

Colossal breakdown electric field and dielectric response of Al-doped CaCu₃Ti₄O₁₂ ceramics

Ran Jia
, Xuetong Zhao
, Jianying Li
, Xian Tang

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

76 Scopus citations

Abstract

A greatly enhanced breakdown electric field of ∼21 kV/cm was achieved by liquid-phase doping of Al₂O₃ in CaCu₃Ti ₄O₁₂ (CCTO) ceramics. It was found that the dielectric loss of CCTO ceramics was composed of two dielectric relaxation peaks and dc conduction. Impedance analysis showed that the grain boundary resistance was increased from 0.37 MΩ to 13.55 MΩ and the corresponding activation energy of grain boundary was elevated from 0.63 eV to 0.81 eV. The frequency dependence of the conductivity was interpreted with the Jonscher's law, which indicated that the contribution of dc-like conduction at low frequency was effectively suppressed by Al₂O₃ doping. In addition, dimensional effect of the CCTO ceramics was found and an inflection (or critical) point behavior can be observed for pure and Al-doped samples, which referred to the variation of the breakdown electric field with the thickness of the samples.

Original language	English
Pages (from-to)	79-85
Number of pages	7
Journal	Materials Science and Engineering: B
Volume	185
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2014.02.015
State	Published - Jul 2014

Keywords

Dielectric properties
Dimensional effect
Grain boundary

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10.1016/j.mseb.2014.02.015

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title = "Colossal breakdown electric field and dielectric response of Al-doped CaCu3Ti4O12 ceramics",

abstract = "A greatly enhanced breakdown electric field of ∼21 kV/cm was achieved by liquid-phase doping of Al2O3 in CaCu3Ti 4O12 (CCTO) ceramics. It was found that the dielectric loss of CCTO ceramics was composed of two dielectric relaxation peaks and dc conduction. Impedance analysis showed that the grain boundary resistance was increased from 0.37 MΩ to 13.55 MΩ and the corresponding activation energy of grain boundary was elevated from 0.63 eV to 0.81 eV. The frequency dependence of the conductivity was interpreted with the Jonscher's law, which indicated that the contribution of dc-like conduction at low frequency was effectively suppressed by Al2O3 doping. In addition, dimensional effect of the CCTO ceramics was found and an inflection (or critical) point behavior can be observed for pure and Al-doped samples, which referred to the variation of the breakdown electric field with the thickness of the samples.",

keywords = "Dielectric properties, Dimensional effect, Grain boundary",

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T1 - Colossal breakdown electric field and dielectric response of Al-doped CaCu3Ti4O12 ceramics

AU - Jia, Ran

AU - Zhao, Xuetong

AU - Li, Jianying

AU - Tang, Xian

PY - 2014/7

Y1 - 2014/7

N2 - A greatly enhanced breakdown electric field of ∼21 kV/cm was achieved by liquid-phase doping of Al2O3 in CaCu3Ti 4O12 (CCTO) ceramics. It was found that the dielectric loss of CCTO ceramics was composed of two dielectric relaxation peaks and dc conduction. Impedance analysis showed that the grain boundary resistance was increased from 0.37 MΩ to 13.55 MΩ and the corresponding activation energy of grain boundary was elevated from 0.63 eV to 0.81 eV. The frequency dependence of the conductivity was interpreted with the Jonscher's law, which indicated that the contribution of dc-like conduction at low frequency was effectively suppressed by Al2O3 doping. In addition, dimensional effect of the CCTO ceramics was found and an inflection (or critical) point behavior can be observed for pure and Al-doped samples, which referred to the variation of the breakdown electric field with the thickness of the samples.

AB - A greatly enhanced breakdown electric field of ∼21 kV/cm was achieved by liquid-phase doping of Al2O3 in CaCu3Ti 4O12 (CCTO) ceramics. It was found that the dielectric loss of CCTO ceramics was composed of two dielectric relaxation peaks and dc conduction. Impedance analysis showed that the grain boundary resistance was increased from 0.37 MΩ to 13.55 MΩ and the corresponding activation energy of grain boundary was elevated from 0.63 eV to 0.81 eV. The frequency dependence of the conductivity was interpreted with the Jonscher's law, which indicated that the contribution of dc-like conduction at low frequency was effectively suppressed by Al2O3 doping. In addition, dimensional effect of the CCTO ceramics was found and an inflection (or critical) point behavior can be observed for pure and Al-doped samples, which referred to the variation of the breakdown electric field with the thickness of the samples.

KW - Dielectric properties

KW - Dimensional effect

KW - Grain boundary

UR - https://www.scopus.com/pages/publications/84896512546

U2 - 10.1016/j.mseb.2014.02.015

DO - 10.1016/j.mseb.2014.02.015

M3 - 文章

AN - SCOPUS:84896512546

SN - 0921-5107

VL - 185

SP - 79

EP - 85

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1

ER -

Colossal breakdown electric field and dielectric response of Al-doped CaCu₃Ti₄O₁₂ ceramics

Abstract

Keywords

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