Abstract
Cold sintering process (CSP) provides an effective method for controlling grain size through low-temperature densification in hundreds of ceramic materials, including ZnO-based ceramics. However, the interfacial layers, residual amorphous phases, and insufficient ionic solubility left by CSP hinder the overall performance of cold-sintered ZnO varistor ceramics. Here, thermal treatment is employed to assist cold-sintered ZnO varistor ceramics in addressing the defects arising from the CSP. Using CSP at 300 °C, large-size ZnO varistor samples (40 mm in diameter) with a relative density (ρr) of ~ 90% were achieved. Following the thermal treatment, the amorphous phase (e.g., Bi2O3, Y2O3, and Co2O3) was transformed into Bi-rich phases, which effectively filled pores and bonded loose grains, resulting in a notable increase in ρr to ~ 98% and an impressive Vickers hardness of 252 HV. Meanwhile, the interfacial layer surrounding the ZnO grains transformed into high-resistance grain boundaries that are essential for high nonlinear ohmic properties. Specifically, the sample annealed at 850 °C exhibited a high Schottky barrier (ΦB) of 0.97 eV and an ultra-low leakage current of 2.1 μA cm−2, leading to a remarkable breakdown electric field (Eb) of 1573 V mm−1 and a high nonlinear coefficient (α) of 96. This work thus shows that combining CSP and thermal treatment provides a significant guideline for designing ZnO varistor ceramics with superior mechanical and electrical performances.
| Original language | English |
|---|---|
| Pages (from-to) | 8979-8994 |
| Number of pages | 16 |
| Journal | Rare Metals |
| Volume | 44 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 2025 |
Keywords
- Cold sintering process
- Electrical properties
- Schottky barrier
- Thermal treatment
- ZnO varistors