Chemistry and structure of BaTiO3 ultra-thin films grown by different O2 plasma power

J. L. Wang; J. Leroy; G. Niu; G. Saint-Girons; B. Gautier; B. Vilquin; N. Barrett

doi:10.1016/j.cplett.2013.12.030

Chemistry and structure of BaTiO₃ ultra-thin films grown by different O₂ plasma power

J. L. Wang
, J. Leroy
, G. Niu
, G. Saint-Girons
, B. Gautier
, B. Vilquin
, N. Barrett

Commissariat à l’énergie atomique et aux énergies alternatives
École centrale de Lyon
Institut national des sciences appliquées Lyon

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We present a study of the chemical and atomic properties of 5 nm TiO ₂-terminated BaTiO₃ (0 0 1) epitaxial films on Nb-doped SrTiO₃, as a function of the atomic oxygen plasma power for film growth. Lower plasma power produces non-stoichiometric films with oxygen vacancies and Ti³⁺ ions. The larger Ti³⁺ ion radius and the in-plane clamping gives rise to an increase in the out-of-plane lattice parameter. XPS measures the Ti³⁺ concentration and the concomitant increase in dissociative water uptake in the film, giving rise to on-top OH ^- adsorption on surface Ti, proton adsorption on surface oxygen, and a near surface Ba-OH environment.

Original language	English
Pages (from-to)	206-210
Number of pages	5
Journal	Chemical Physics Letters
Volume	592
DOIs	https://doi.org/10.1016/j.cplett.2013.12.030
State	Published - 30 Jan 2014
Externally published	Yes

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title = "Chemistry and structure of BaTiO3 ultra-thin films grown by different O2 plasma power",

abstract = "We present a study of the chemical and atomic properties of 5 nm TiO 2-terminated BaTiO3 (0 0 1) epitaxial films on Nb-doped SrTiO3, as a function of the atomic oxygen plasma power for film growth. Lower plasma power produces non-stoichiometric films with oxygen vacancies and Ti3+ ions. The larger Ti3+ ion radius and the in-plane clamping gives rise to an increase in the out-of-plane lattice parameter. XPS measures the Ti3+ concentration and the concomitant increase in dissociative water uptake in the film, giving rise to on-top OH - adsorption on surface Ti, proton adsorption on surface oxygen, and a near surface Ba-OH environment.",

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T1 - Chemistry and structure of BaTiO3 ultra-thin films grown by different O2 plasma power

AU - Wang, J. L.

AU - Leroy, J.

AU - Niu, G.

AU - Saint-Girons, G.

AU - Gautier, B.

AU - Vilquin, B.

AU - Barrett, N.

PY - 2014/1/30

Y1 - 2014/1/30

N2 - We present a study of the chemical and atomic properties of 5 nm TiO 2-terminated BaTiO3 (0 0 1) epitaxial films on Nb-doped SrTiO3, as a function of the atomic oxygen plasma power for film growth. Lower plasma power produces non-stoichiometric films with oxygen vacancies and Ti3+ ions. The larger Ti3+ ion radius and the in-plane clamping gives rise to an increase in the out-of-plane lattice parameter. XPS measures the Ti3+ concentration and the concomitant increase in dissociative water uptake in the film, giving rise to on-top OH - adsorption on surface Ti, proton adsorption on surface oxygen, and a near surface Ba-OH environment.

AB - We present a study of the chemical and atomic properties of 5 nm TiO 2-terminated BaTiO3 (0 0 1) epitaxial films on Nb-doped SrTiO3, as a function of the atomic oxygen plasma power for film growth. Lower plasma power produces non-stoichiometric films with oxygen vacancies and Ti3+ ions. The larger Ti3+ ion radius and the in-plane clamping gives rise to an increase in the out-of-plane lattice parameter. XPS measures the Ti3+ concentration and the concomitant increase in dissociative water uptake in the film, giving rise to on-top OH - adsorption on surface Ti, proton adsorption on surface oxygen, and a near surface Ba-OH environment.

UR - https://www.scopus.com/pages/publications/84892184384

U2 - 10.1016/j.cplett.2013.12.030

DO - 10.1016/j.cplett.2013.12.030

M3 - 文章

AN - SCOPUS:84892184384

SN - 0009-2614

VL - 592

SP - 206

EP - 210

JO - Chemical Physics Letters

JF - Chemical Physics Letters

ER -

Chemistry and structure of BaTiO₃ ultra-thin films grown by different O₂ plasma power

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