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Charge state effect on K-shell ionization of silicon induced by iodineq+ ions

  • Yu Lei
  • , Rui Cheng
  • , Xianming Zhou
  • , Xing Wang
  • , Yuyu Wang
  • , Jieru Ren
  • , Yongtao Zhao
  • , Xinwen Ma
  • , Guoqing Xiao
  • CAS - Institute of Modern Physics
  • University of Chinese Academy of Sciences
  • Xi'an Jiaotong University

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Abstract: In near Bohr velocity ion-atom collisions, a dependence of target K-shell ionization cross sections upon the ionic charge states has been observed. Experiments were performed in silicon solid target with 2–5 MeV iodineq+ ions incident in charge states +20 to +25. K-shell ionization cross section of silicon for q = 20 and 22 iodine ions impact with the same incident energy are almost equal, and are well described by the theory of binding-energy-modified BEA. However, for q = 25 iodine ions collisions, 3d vacancies of projectile transfer to the 1s orbit of target atom via rotational coupling of 3dπ, δ-3dσ molecular orbits in the framework of quasi-molecular model, which results in an increase of the K-shell ionization cross section of silicon.

Original languageEnglish
Article number132
JournalZeitschrift fur Physik D-Atoms Molecules and Clusters
Volume72
Issue number8
DOIs
StatePublished - 1 Aug 2018

Keywords

  • Atomic and Molecular Collisions

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