Characterization of ZnO films grown on different substrates by L-MBE method

Xiaodong Yang; Jingwen Zhang; Qing'an Xu; Yongning He; Hongbo Wang; Weifeng Zhang; Xun Hou

doi:10.1117/12.608013

Characterization of ZnO films grown on different substrates by L-MBE method

Xiaodong Yang
, Jingwen Zhang
, Qing'an Xu
, Yongning He
, Hongbo Wang
, Weifeng Zhang
, Xun Hou

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

ZnO films were fabricated using Laser molecular beam epitaxy method on different substrates including Si(001), C-plane and R-plane Al₂O ₃. The crystallinity and orientation of the films, as well as the epitaxial relationship between ZnO films and the substrate were studied using X-ray diffraction (XRD) technique. For the films grown on C-plane Al ₂O₃ and Si(001) substrates, Highly c-axis oriented ZnO films were obtained. The surface morphology and roughness of ZnO films were determined by atomic force microscopy (AFM) and Reflection High Energy Electron diffraction (RHEED).

Original language	English
Article number	85
Pages (from-to)	369-372
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5774
DOIs	https://doi.org/10.1117/12.608013
State	Published - 2005
Event	Fifth International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 31 May 2004 → 2 Jun 2004

Keywords

Atomic force microscopy
Laser molecular beam epitaxy
Photoluminescence
ZnO

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10.1117/12.608013

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title = "Characterization of ZnO films grown on different substrates by L-MBE method",

abstract = "ZnO films were fabricated using Laser molecular beam epitaxy method on different substrates including Si(001), C-plane and R-plane Al2O 3. The crystallinity and orientation of the films, as well as the epitaxial relationship between ZnO films and the substrate were studied using X-ray diffraction (XRD) technique. For the films grown on C-plane Al 2O3 and Si(001) substrates, Highly c-axis oriented ZnO films were obtained. The surface morphology and roughness of ZnO films were determined by atomic force microscopy (AFM) and Reflection High Energy Electron diffraction (RHEED).",

keywords = "Atomic force microscopy, Laser molecular beam epitaxy, Photoluminescence, ZnO",

author = "Xiaodong Yang and Jingwen Zhang and Qing'an Xu and Yongning He and Hongbo Wang and Weifeng Zhang and Xun Hou",

year = "2005",

doi = "10.1117/12.608013",

language = "英语",

volume = "5774",

pages = "369--372",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Fifth International Conference on Thin Film Physics and Applications ; Conference date: 31-05-2004 Through 02-06-2004",

}

TY - JOUR

T1 - Characterization of ZnO films grown on different substrates by L-MBE method

AU - Yang, Xiaodong

AU - Zhang, Jingwen

AU - Xu, Qing'an

AU - He, Yongning

AU - Wang, Hongbo

AU - Zhang, Weifeng

AU - Hou, Xun

PY - 2005

Y1 - 2005

N2 - ZnO films were fabricated using Laser molecular beam epitaxy method on different substrates including Si(001), C-plane and R-plane Al2O 3. The crystallinity and orientation of the films, as well as the epitaxial relationship between ZnO films and the substrate were studied using X-ray diffraction (XRD) technique. For the films grown on C-plane Al 2O3 and Si(001) substrates, Highly c-axis oriented ZnO films were obtained. The surface morphology and roughness of ZnO films were determined by atomic force microscopy (AFM) and Reflection High Energy Electron diffraction (RHEED).

AB - ZnO films were fabricated using Laser molecular beam epitaxy method on different substrates including Si(001), C-plane and R-plane Al2O 3. The crystallinity and orientation of the films, as well as the epitaxial relationship between ZnO films and the substrate were studied using X-ray diffraction (XRD) technique. For the films grown on C-plane Al 2O3 and Si(001) substrates, Highly c-axis oriented ZnO films were obtained. The surface morphology and roughness of ZnO films were determined by atomic force microscopy (AFM) and Reflection High Energy Electron diffraction (RHEED).

KW - Atomic force microscopy

KW - Laser molecular beam epitaxy

KW - Photoluminescence

KW - ZnO

UR - https://www.scopus.com/pages/publications/25644455341

U2 - 10.1117/12.608013

DO - 10.1117/12.608013

M3 - 会议文章

AN - SCOPUS:25644455341

SN - 0277-786X

VL - 5774

SP - 369

EP - 372

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 85

T2 - Fifth International Conference on Thin Film Physics and Applications

Y2 - 31 May 2004 through 2 June 2004

ER -

Characterization of ZnO films grown on different substrates by L-MBE method

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Keywords

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