Characterization of sidewall roughness for silicon microstructures in micro actuator

Guoqiang Han; Zhuangde Jiang; Weixuan Jing; Jianzhong Gao; Philip D. Prewett; Kyle Jiang

doi:10.3233/JAE-2010-1211

Characterization of sidewall roughness for silicon microstructures in micro actuator

Guoqiang Han
, Zhuangde Jiang
, Weixuan Jing
, Jianzhong Gao
, Philip D. Prewett
, Kyle Jiang

School of Mechanical Engineering

Xi'an Jiaotong University
University of Birmingham

Research output: Contribution to journal › Article › peer-review

Abstract

Thermal micro actuators are fabricated using deep reactive ion etching (DRIE) technique on silicon on insulator (SOI) substrates. The sidewalls of silicon microstructure in micro actuator are used as optical interfaces with the fibers. Line edge roughness (LER) of reflective sidewalls is essential to device performance. A method is presented through analyzing high-resolution top-down scanning electron microscope (SEM) images to characterize sidewall line edge roughness (LER) of Si microstructures in thermal micro actuator, only conventional SEM scanning technique is required.

Original language	English
Pages (from-to)	985-990
Number of pages	6
Journal	International Journal of Applied Electromagnetics and Mechanics
Volume	33
Issue number	3-4
DOIs	https://doi.org/10.3233/JAE-2010-1211
State	Published - 2010

Keywords

Micro actuator
deep reactive ion etching (DRIE)
line edge roughness (LER)
scanning electron microscope (SEM)

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10.3233/JAE-2010-1211

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title = "Characterization of sidewall roughness for silicon microstructures in micro actuator",

abstract = "Thermal micro actuators are fabricated using deep reactive ion etching (DRIE) technique on silicon on insulator (SOI) substrates. The sidewalls of silicon microstructure in micro actuator are used as optical interfaces with the fibers. Line edge roughness (LER) of reflective sidewalls is essential to device performance. A method is presented through analyzing high-resolution top-down scanning electron microscope (SEM) images to characterize sidewall line edge roughness (LER) of Si microstructures in thermal micro actuator, only conventional SEM scanning technique is required.",

keywords = "Micro actuator, deep reactive ion etching (DRIE), line edge roughness (LER), scanning electron microscope (SEM)",

author = "Guoqiang Han and Zhuangde Jiang and Weixuan Jing and Jianzhong Gao and Prewett, \{Philip D.\} and Kyle Jiang",

year = "2010",

doi = "10.3233/JAE-2010-1211",

language = "英语",

volume = "33",

pages = "985--990",

journal = "International Journal of Applied Electromagnetics and Mechanics",

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T1 - Characterization of sidewall roughness for silicon microstructures in micro actuator

AU - Han, Guoqiang

AU - Jiang, Zhuangde

AU - Jing, Weixuan

AU - Gao, Jianzhong

AU - Prewett, Philip D.

AU - Jiang, Kyle

PY - 2010

Y1 - 2010

N2 - Thermal micro actuators are fabricated using deep reactive ion etching (DRIE) technique on silicon on insulator (SOI) substrates. The sidewalls of silicon microstructure in micro actuator are used as optical interfaces with the fibers. Line edge roughness (LER) of reflective sidewalls is essential to device performance. A method is presented through analyzing high-resolution top-down scanning electron microscope (SEM) images to characterize sidewall line edge roughness (LER) of Si microstructures in thermal micro actuator, only conventional SEM scanning technique is required.

AB - Thermal micro actuators are fabricated using deep reactive ion etching (DRIE) technique on silicon on insulator (SOI) substrates. The sidewalls of silicon microstructure in micro actuator are used as optical interfaces with the fibers. Line edge roughness (LER) of reflective sidewalls is essential to device performance. A method is presented through analyzing high-resolution top-down scanning electron microscope (SEM) images to characterize sidewall line edge roughness (LER) of Si microstructures in thermal micro actuator, only conventional SEM scanning technique is required.

KW - Micro actuator

KW - deep reactive ion etching (DRIE)

KW - line edge roughness (LER)

KW - scanning electron microscope (SEM)

UR - https://www.scopus.com/pages/publications/78650352197

U2 - 10.3233/JAE-2010-1211

DO - 10.3233/JAE-2010-1211

M3 - 文章

AN - SCOPUS:78650352197

SN - 1383-5416

VL - 33

SP - 985

EP - 990

JO - International Journal of Applied Electromagnetics and Mechanics

JF - International Journal of Applied Electromagnetics and Mechanics

IS - 3-4

ER -

Characterization of sidewall roughness for silicon microstructures in micro actuator

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Keywords

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