Characterization of an Asymmetrical Capacitive MEMS Tilt Sensor

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Abstract

This paper presents a uniaxial tilt sensor with the asymmetric differential capacitors for the unique tilt measurement, which has the advantages of low cross-sensitivity and low fabrication cost. The MEMS capacitive tilt sensor was designed, characterized and verified for high accuracy and reliability. The experiment results indicated the average sensitivity and bias instability of 5 fF/° and 0.0028° (at 0° position). The temperature drift of bias is 0.034 °/°C (above room temperature) and 0.146 °/°C (below room temperature). After calibration compensation, the temperature sensitivity drift can be stabilized to be only 15.8 ppm/°C. In addition, the practical performance has been validated by the prototype of the test board, which indicates the feasible application potential of the asymmetrical capacitive MEMS tilt sensor.

Original languageEnglish
Title of host publicationProceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1660-1663
Number of pages4
ISBN (Electronic)9781665419413
DOIs
StatePublished - 25 Apr 2021
Event16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021 - Xiamen, China
Duration: 25 Apr 202129 Apr 2021

Publication series

NameProceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021

Conference

Conference16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021
Country/TerritoryChina
CityXiamen
Period25/04/2129/04/21

Keywords

  • MEMS
  • asymmetrical capacitors
  • bias instability
  • temperature effect
  • tilt sensing

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