Characteristics of ruthenium ohmic contact to heavily boron doped diamond by post-annealing

Wangzhen Song; Dan Zhao; Juan Wang; Zhangcheng Liu; Yanfeng Wang; Xiaohui Chang; Ruozheng Wang; Wei Wang; Haris Naeem Abbasi; Hongxing Wang

doi:10.1016/j.diamond.2020.107869

Characteristics of ruthenium ohmic contact to heavily boron doped diamond by post-annealing

Wangzhen Song
, Dan Zhao
, Juan Wang
, Zhangcheng Liu
, Yanfeng Wang
, Xiaohui Chang
, Ruozheng Wang
, Wei Wang
, Haris Naeem Abbasi
, Hongxing Wang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The characteristics of ruthenium (Ru) contact to boron doped diamond (BDD) have been investigated before and after annealing. The properties of as-deposited Ru contacts to BDD showed non-linear trend. Interestingly, the contact properties of Ru/BDD exhibited ohmic contact behavior after post-annealing at 500 °C. The specific contact resistance (ρ_c) of Ru/BDD was 2.3 × 10⁻⁴ Ω·cm² after annealing at 500 °C for 20 min in the argon (Ar) ambient. The contact barrier height was 0.075 eV ± 0.14 eV after annealing at 500 °C, evaluated by X-ray photoelectron spectroscopy (XPS).

Original language	English
Article number	107869
Journal	Diamond and Related Materials
Volume	106
DOIs	https://doi.org/10.1016/j.diamond.2020.107869
State	Published - Jun 2020

Keywords

Barrier height
C-TLM
Diamond
Ohmic contact
Ruthenium
XPS

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10.1016/j.diamond.2020.107869

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@article{604d81d208974b2b8d9d16758cd665ec,

title = "Characteristics of ruthenium ohmic contact to heavily boron doped diamond by post-annealing",

abstract = "The characteristics of ruthenium (Ru) contact to boron doped diamond (BDD) have been investigated before and after annealing. The properties of as-deposited Ru contacts to BDD showed non-linear trend. Interestingly, the contact properties of Ru/BDD exhibited ohmic contact behavior after post-annealing at 500 °C. The specific contact resistance (ρc) of Ru/BDD was 2.3 × 10−4 Ω·cm2 after annealing at 500 °C for 20 min in the argon (Ar) ambient. The contact barrier height was 0.075 eV ± 0.14 eV after annealing at 500 °C, evaluated by X-ray photoelectron spectroscopy (XPS).",

keywords = "Barrier height, C-TLM, Diamond, Ohmic contact, Ruthenium, XPS",

author = "Wangzhen Song and Dan Zhao and Juan Wang and Zhangcheng Liu and Yanfeng Wang and Xiaohui Chang and Ruozheng Wang and Wei Wang and Abbasi, \{Haris Naeem\} and Hongxing Wang",

note = "Publisher Copyright: {\textcopyright} 2020",

year = "2020",

month = jun,

doi = "10.1016/j.diamond.2020.107869",

language = "英语",

volume = "106",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Characteristics of ruthenium ohmic contact to heavily boron doped diamond by post-annealing

AU - Song, Wangzhen

AU - Zhao, Dan

AU - Wang, Juan

AU - Liu, Zhangcheng

AU - Wang, Yanfeng

AU - Chang, Xiaohui

AU - Wang, Ruozheng

AU - Wang, Wei

AU - Abbasi, Haris Naeem

AU - Wang, Hongxing

PY - 2020/6

Y1 - 2020/6

N2 - The characteristics of ruthenium (Ru) contact to boron doped diamond (BDD) have been investigated before and after annealing. The properties of as-deposited Ru contacts to BDD showed non-linear trend. Interestingly, the contact properties of Ru/BDD exhibited ohmic contact behavior after post-annealing at 500 °C. The specific contact resistance (ρc) of Ru/BDD was 2.3 × 10−4 Ω·cm2 after annealing at 500 °C for 20 min in the argon (Ar) ambient. The contact barrier height was 0.075 eV ± 0.14 eV after annealing at 500 °C, evaluated by X-ray photoelectron spectroscopy (XPS).

AB - The characteristics of ruthenium (Ru) contact to boron doped diamond (BDD) have been investigated before and after annealing. The properties of as-deposited Ru contacts to BDD showed non-linear trend. Interestingly, the contact properties of Ru/BDD exhibited ohmic contact behavior after post-annealing at 500 °C. The specific contact resistance (ρc) of Ru/BDD was 2.3 × 10−4 Ω·cm2 after annealing at 500 °C for 20 min in the argon (Ar) ambient. The contact barrier height was 0.075 eV ± 0.14 eV after annealing at 500 °C, evaluated by X-ray photoelectron spectroscopy (XPS).

KW - Barrier height

KW - C-TLM

KW - Diamond

KW - Ohmic contact

KW - Ruthenium

KW - XPS

UR - https://www.scopus.com/pages/publications/85083812555

U2 - 10.1016/j.diamond.2020.107869

DO - 10.1016/j.diamond.2020.107869

M3 - 文章

AN - SCOPUS:85083812555

SN - 0925-9635

VL - 106

JO - Diamond and Related Materials

JF - Diamond and Related Materials

M1 - 107869

ER -

Characteristics of ruthenium ohmic contact to heavily boron doped diamond by post-annealing

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Keywords

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