TY - JOUR
T1 - Ceramic dielectric film capacitors fabricated on aluminum foils by chemical solution deposition
AU - Hu, Zhongqiang
AU - Ma, Beihai
AU - Liu, Shanshan
AU - Narayanan, Manoj
AU - Balachandran, Uthamalingam
PY - 2014/4
Y1 - 2014/4
N2 - Integration of oxides onto base metal substrates offers great advantages in cost and weight reduction, device miniaturization, and flexibility in packaging. In this work, we report the deposition of dielectric Pb 0.92La0.08Zr0.52Ti0.48O 3-δ (PLZT 8/52/48) films on aluminum foils by an in-air crystallization process. Film-on-foil structures with and without conductive oxide LaNiO3 (LNO) buffer layer between PLZT film and aluminum foil were tested. Utilization of LNO buffer layer dramatically improved the dielectric and ferroelectric properties of the overlying PLZT compared with those for films deposited directly on aluminum. The improvements in electrical properties were attributed to the suppression of cubic non-ferroelectric layer at the metal/dielectric interface by LNO buffer layer. This work can be extended to the integration of other functional oxide materials with light, conductive, and inexpensive aluminum substrates for a broad range of applications.
AB - Integration of oxides onto base metal substrates offers great advantages in cost and weight reduction, device miniaturization, and flexibility in packaging. In this work, we report the deposition of dielectric Pb 0.92La0.08Zr0.52Ti0.48O 3-δ (PLZT 8/52/48) films on aluminum foils by an in-air crystallization process. Film-on-foil structures with and without conductive oxide LaNiO3 (LNO) buffer layer between PLZT film and aluminum foil were tested. Utilization of LNO buffer layer dramatically improved the dielectric and ferroelectric properties of the overlying PLZT compared with those for films deposited directly on aluminum. The improvements in electrical properties were attributed to the suppression of cubic non-ferroelectric layer at the metal/dielectric interface by LNO buffer layer. This work can be extended to the integration of other functional oxide materials with light, conductive, and inexpensive aluminum substrates for a broad range of applications.
KW - A. Thin films
KW - B. Sol-gel chemistry
KW - D. Dielectric properties
KW - D. Energy storage
KW - D. Ferroelectricity
UR - https://www.scopus.com/pages/publications/84897661664
U2 - 10.1016/j.materresbull.2013.11.030
DO - 10.1016/j.materresbull.2013.11.030
M3 - 文章
AN - SCOPUS:84897661664
SN - 0025-5408
VL - 52
SP - 189
EP - 193
JO - Materials Research Bulletin
JF - Materials Research Bulletin
ER -