Abstract
In this paper, the formation of buckling and delamination of sandwiched stacking of Ti/Cu/Si thin film are investigated. The crystallization structures, the composition of the Cu/Ti thin films, and the surface morphology are measured during annealing. The results show that the solid-phase reaction between Cu and Ti occurs at the interface. Buckling is initiated in the thin film annealed at 600°C. The volume expansion promotes the buckling and further produces microcracks. With increasing volume expansion, there are cavities formed in the middle layer when the annealing temperature is up to 700°C. Finally, thin film is delaminated from the substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 3351-3356 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 43 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 2014 |
Keywords
- buckling
- delamination
- interface reaction
- microcracks
- Thin Film