Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors

Linghang Wang; Wanqi Jie

doi:10.1016/j.jcrysgro.2011.10.057

Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors

Linghang Wang
, Wanqi Jie

Faculty of Electronic and Information Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Novel Hg₃In₂Te₆ (MIT) single crystals with 30 mm in diameter and 110 mm in length have been reproducibly grown by the vertical Bridgman (VB) method. The crystalline phase was confirmed by X-ray diffraction to be free of transformation. Rocking curves using a double-crystal X-ray diffractometer showed that the full widths at half maximum of the as-grown MIT crystals were in the range of 150-317 arc sec. The electrical resistivity, carrier density and mobility from Hall measurements at room temperature were 1.79×10³ Ω cm, 1.01×10¹³ cm^-3 and 3.44×10² cm² V^-1 s^-1, respectively. The existing defects in the as-grown MIT crystals were displayed and the average etch pits density (EPD) using the modified Chen etchant solution was (2-6)×10⁴ cm^-2 in the whole ingot.

Original language	English
Pages (from-to)	327-329
Number of pages	3
Journal	Journal of Crystal Growth
Volume	362
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.10.057
State	Published - 1 Jan 2013

Keywords

A1. X-ray diffraction
A2. Crystal growth from melt
A2. Vertical Bridgman method
B2. Mercury indium telluride
B3. Near-infrared photovoltaic detector

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10.1016/j.jcrysgro.2011.10.057

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title = "Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors",

abstract = "Novel Hg3In2Te6 (MIT) single crystals with 30 mm in diameter and 110 mm in length have been reproducibly grown by the vertical Bridgman (VB) method. The crystalline phase was confirmed by X-ray diffraction to be free of transformation. Rocking curves using a double-crystal X-ray diffractometer showed that the full widths at half maximum of the as-grown MIT crystals were in the range of 150-317 arc sec. The electrical resistivity, carrier density and mobility from Hall measurements at room temperature were 1.79×103 Ω cm, 1.01×1013 cm-3 and 3.44×102 cm2 V-1 s-1, respectively. The existing defects in the as-grown MIT crystals were displayed and the average etch pits density (EPD) using the modified Chen etchant solution was (2-6)×104 cm-2 in the whole ingot.",

keywords = "A1. X-ray diffraction, A2. Crystal growth from melt, A2. Vertical Bridgman method, B2. Mercury indium telluride, B3. Near-infrared photovoltaic detector",

author = "Linghang Wang and Wanqi Jie",

year = "2013",

month = jan,

day = "1",

doi = "10.1016/j.jcrysgro.2011.10.057",

language = "英语",

volume = "362",

pages = "327--329",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

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TY - JOUR

T1 - Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors

AU - Wang, Linghang

AU - Jie, Wanqi

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Novel Hg3In2Te6 (MIT) single crystals with 30 mm in diameter and 110 mm in length have been reproducibly grown by the vertical Bridgman (VB) method. The crystalline phase was confirmed by X-ray diffraction to be free of transformation. Rocking curves using a double-crystal X-ray diffractometer showed that the full widths at half maximum of the as-grown MIT crystals were in the range of 150-317 arc sec. The electrical resistivity, carrier density and mobility from Hall measurements at room temperature were 1.79×103 Ω cm, 1.01×1013 cm-3 and 3.44×102 cm2 V-1 s-1, respectively. The existing defects in the as-grown MIT crystals were displayed and the average etch pits density (EPD) using the modified Chen etchant solution was (2-6)×104 cm-2 in the whole ingot.

AB - Novel Hg3In2Te6 (MIT) single crystals with 30 mm in diameter and 110 mm in length have been reproducibly grown by the vertical Bridgman (VB) method. The crystalline phase was confirmed by X-ray diffraction to be free of transformation. Rocking curves using a double-crystal X-ray diffractometer showed that the full widths at half maximum of the as-grown MIT crystals were in the range of 150-317 arc sec. The electrical resistivity, carrier density and mobility from Hall measurements at room temperature were 1.79×103 Ω cm, 1.01×1013 cm-3 and 3.44×102 cm2 V-1 s-1, respectively. The existing defects in the as-grown MIT crystals were displayed and the average etch pits density (EPD) using the modified Chen etchant solution was (2-6)×104 cm-2 in the whole ingot.

KW - A1. X-ray diffraction

KW - A2. Crystal growth from melt

KW - A2. Vertical Bridgman method

KW - B2. Mercury indium telluride

KW - B3. Near-infrared photovoltaic detector

UR - https://www.scopus.com/pages/publications/84870299247

U2 - 10.1016/j.jcrysgro.2011.10.057

DO - 10.1016/j.jcrysgro.2011.10.057

M3 - 文章

AN - SCOPUS:84870299247

SN - 0022-0248

VL - 362

SP - 327

EP - 329

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors

Abstract

Keywords

UN SDGs

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