Breakdown voltage enhancement of vertical diamond Schottky barrier diodes by selective growth nitrogen-doped diamond field plate

Qi Li; Juan Wang; Genqiang Chen; Shi He; Qianwen Zhang; Shumiao Zhang; Ruozheng Wang; Shuwei Fan; Hong Xing Wang

doi:10.1016/j.diamond.2023.109799

Breakdown voltage enhancement of vertical diamond Schottky barrier diodes by selective growth nitrogen-doped diamond field plate

Qi Li
, Juan Wang
, Genqiang Chen
, Shi He
, Qianwen Zhang
, Shumiao Zhang
, Ruozheng Wang
, Shuwei Fan
, Hong Xing Wang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We proposed a nitrogen-doped field plate (NFP) structure for vertical p-type diamond Schottky barrier diode (SBD). The NFP structure was achieved by selective growth of n-doped diamond film to form low conductivity field plate at the edge area of the Schottky contact. The nitrogen-doped diamond was characterized using Raman spectroscopy. Compared with normal device, the reverse breakdown voltage of this SBD with NFP structure was improved from −80 V to −112 V, and the forward current density was slightly decreased from 9189 to 8742 A/cm² at 10 V. Also, its rectification ratio reached a value of 10¹¹.

Original language	English
Article number	109799
Journal	Diamond and Related Materials
Volume	134
DOIs	https://doi.org/10.1016/j.diamond.2023.109799
State	Published - Apr 2023

Keywords

Breakdown voltage
Diamond
Edge termination
Schottky barrier diodes
Selective growth

Access to Document

10.1016/j.diamond.2023.109799

Cite this

@article{6854d5c3e7cc47f08ebbb48680263209,

title = "Breakdown voltage enhancement of vertical diamond Schottky barrier diodes by selective growth nitrogen-doped diamond field plate",

abstract = "We proposed a nitrogen-doped field plate (NFP) structure for vertical p-type diamond Schottky barrier diode (SBD). The NFP structure was achieved by selective growth of n-doped diamond film to form low conductivity field plate at the edge area of the Schottky contact. The nitrogen-doped diamond was characterized using Raman spectroscopy. Compared with normal device, the reverse breakdown voltage of this SBD with NFP structure was improved from −80 V to −112 V, and the forward current density was slightly decreased from 9189 to 8742 A/cm2 at 10 V. Also, its rectification ratio reached a value of 1011.",

keywords = "Breakdown voltage, Diamond, Edge termination, Schottky barrier diodes, Selective growth",

author = "Qi Li and Juan Wang and Genqiang Chen and Shi He and Qianwen Zhang and Shumiao Zhang and Ruozheng Wang and Shuwei Fan and Wang, \{Hong Xing\}",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = apr,

doi = "10.1016/j.diamond.2023.109799",

language = "英语",

volume = "134",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Breakdown voltage enhancement of vertical diamond Schottky barrier diodes by selective growth nitrogen-doped diamond field plate

AU - Li, Qi

AU - Wang, Juan

AU - Chen, Genqiang

AU - He, Shi

AU - Zhang, Qianwen

AU - Zhang, Shumiao

AU - Wang, Ruozheng

AU - Fan, Shuwei

AU - Wang, Hong Xing

PY - 2023/4

Y1 - 2023/4

N2 - We proposed a nitrogen-doped field plate (NFP) structure for vertical p-type diamond Schottky barrier diode (SBD). The NFP structure was achieved by selective growth of n-doped diamond film to form low conductivity field plate at the edge area of the Schottky contact. The nitrogen-doped diamond was characterized using Raman spectroscopy. Compared with normal device, the reverse breakdown voltage of this SBD with NFP structure was improved from −80 V to −112 V, and the forward current density was slightly decreased from 9189 to 8742 A/cm2 at 10 V. Also, its rectification ratio reached a value of 1011.

AB - We proposed a nitrogen-doped field plate (NFP) structure for vertical p-type diamond Schottky barrier diode (SBD). The NFP structure was achieved by selective growth of n-doped diamond film to form low conductivity field plate at the edge area of the Schottky contact. The nitrogen-doped diamond was characterized using Raman spectroscopy. Compared with normal device, the reverse breakdown voltage of this SBD with NFP structure was improved from −80 V to −112 V, and the forward current density was slightly decreased from 9189 to 8742 A/cm2 at 10 V. Also, its rectification ratio reached a value of 1011.

KW - Breakdown voltage

KW - Diamond

KW - Edge termination

KW - Schottky barrier diodes

KW - Selective growth

UR - https://www.scopus.com/pages/publications/85148694633

U2 - 10.1016/j.diamond.2023.109799

DO - 10.1016/j.diamond.2023.109799

M3 - 文章

AN - SCOPUS:85148694633

SN - 0925-9635

VL - 134

JO - Diamond and Related Materials

JF - Diamond and Related Materials

M1 - 109799

ER -

Breakdown voltage enhancement of vertical diamond Schottky barrier diodes by selective growth nitrogen-doped diamond field plate

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this