Boosting photocatalytic activities of BiVO4 by creation of g-C3N4/ZnO@BiVO4 Heterojunction

  • Nurul Aida Mohamed
  • , Javad Safaei
  • , Aznan Fazli Ismail
  • , Muhammad Najib Khalid
  • , Muhammad Fareez Amir Mohd Jailani
  • , Mohamad Firdaus Mohamad Noh
  • , Nurul Affiqah Arzaee
  • , Di Zhou
  • , Jagdeep S. Sagu
  • , Mohd Asri Mat Teridi

Research output: Contribution to journalArticlepeer-review

88 Scopus citations

Abstract

BiVO4 has attracted great attention as a semiconductor for Photoelectrochemical (PEC) water splitting because of its low cost, good stability, and suitable band gap of 2.4 eV. In this research, the contribution of g-C3N4@ZnO on BiVO4 photoelectrochemical performance, light absorption, charge transportation, and morphology were investigated. Incorporation of g-C3N4/ZnO as underlying layer in heterojunction with BiVO4 boosted the photocurrent from ∼ 0.21 mA cm−2 for bare BiVO4 to 0.65 mA cm−2 for g-C3N4@ZnO/BiVO4 heterojunction composite structure at 1.23 V versus Ag/AgCl. The C and N elements derived from g-C3N4 on ZnO resulted in a tenacious interactions, lowered charge transfer resistance and increased light absorption of BiVO4. The high photoelectrochemical performance, together with good electrochemical impedance spectroscopy parameters and stability reveals g-C3N4/ZnO composite to be a suitable candidate in enhancing the performance of BiVO4 for PEC solar water splitting applications.

Original languageEnglish
Article number110779
JournalMaterials Research Bulletin
Volume125
DOIs
StatePublished - May 2020

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • BiVO
  • Electrodeposition
  • Heterojunction
  • PEC water splitting
  • Spin-coating
  • g-CN/ ZnO composite

Fingerprint

Dive into the research topics of 'Boosting photocatalytic activities of BiVO4 by creation of g-C3N4/ZnO@BiVO4 Heterojunction'. Together they form a unique fingerprint.

Cite this