Bipolar resistive switching behaviors of ITO nanowire networks

Qiang Li; Zhina Gong; Shuai Wang; Jiangteng Wang; Ye Zhang; Feng Yun

doi:10.1063/1.4943216

Bipolar resistive switching behaviors of ITO nanowire networks

Qiang Li
, Zhina Gong
, Shuai Wang
, Jiangteng Wang
, Ye Zhang
, Feng Yun

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior. The resistive switching characteristics of ITO-NW networks are related to the morphology of NWs. The x-ray photoelectron spectroscopy was used to obtain the chemical nature from the NWs surface, investigating the oxygen vacancy state. A stable switching voltages and a clear memory window were observed in needle-shaped NWs. The ITO-NW networks can be used as a new two-dimensional metal oxide material for the fabrication of high-density memory devices.

Original language	English
Article number	025222
Journal	AIP Advances
Volume	6
Issue number	2
DOIs	https://doi.org/10.1063/1.4943216
State	Published - 1 Feb 2016

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title = "Bipolar resistive switching behaviors of ITO nanowire networks",

abstract = "We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior. The resistive switching characteristics of ITO-NW networks are related to the morphology of NWs. The x-ray photoelectron spectroscopy was used to obtain the chemical nature from the NWs surface, investigating the oxygen vacancy state. A stable switching voltages and a clear memory window were observed in needle-shaped NWs. The ITO-NW networks can be used as a new two-dimensional metal oxide material for the fabrication of high-density memory devices.",

author = "Qiang Li and Zhina Gong and Shuai Wang and Jiangteng Wang and Ye Zhang and Feng Yun",

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year = "2016",

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doi = "10.1063/1.4943216",

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T1 - Bipolar resistive switching behaviors of ITO nanowire networks

AU - Li, Qiang

AU - Gong, Zhina

AU - Wang, Shuai

AU - Wang, Jiangteng

AU - Zhang, Ye

AU - Yun, Feng

PY - 2016/2/1

Y1 - 2016/2/1

N2 - We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior. The resistive switching characteristics of ITO-NW networks are related to the morphology of NWs. The x-ray photoelectron spectroscopy was used to obtain the chemical nature from the NWs surface, investigating the oxygen vacancy state. A stable switching voltages and a clear memory window were observed in needle-shaped NWs. The ITO-NW networks can be used as a new two-dimensional metal oxide material for the fabrication of high-density memory devices.

AB - We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior. The resistive switching characteristics of ITO-NW networks are related to the morphology of NWs. The x-ray photoelectron spectroscopy was used to obtain the chemical nature from the NWs surface, investigating the oxygen vacancy state. A stable switching voltages and a clear memory window were observed in needle-shaped NWs. The ITO-NW networks can be used as a new two-dimensional metal oxide material for the fabrication of high-density memory devices.

UR - https://www.scopus.com/pages/publications/84959495056

U2 - 10.1063/1.4943216

DO - 10.1063/1.4943216

M3 - 文章

AN - SCOPUS:84959495056

SN - 2158-3226

VL - 6

JO - AIP Advances

JF - AIP Advances

IS - 2

M1 - 025222

ER -

Bipolar resistive switching behaviors of ITO nanowire networks

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