Abstract
The generation of high quality bipolar random signal for unconventional computing and artificial neural networks remains challenging. In this study, we proposed a new method to generate bipolar random signals using two industrial-viable magnetic tunnel junctions (MTJs) operated solely by electrical operations compatible to the conventional memory program/read circuits. The bipolar random signals demonstrate excellent randomness and this method shows satisfying controllability over the average dwell times (ADTs), with good adjustability in bit generation speed and power consumption. This study provides a new practical hardware solution to the generation of high-quality random signals in the post-Moore era.
| Original language | English |
|---|---|
| Pages (from-to) | 171-174 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 46 |
| Issue number | 2 |
| DOIs | |
| State | Published - 2025 |
Keywords
- Random bit generation
- magnetic tunnel junction
- probabilistic switching
- spintronic
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