Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

Enchao Peng; Xiaoliang Wang; Hongling Xiao; Cuimei Wang; Haibo Yin; Hong Chen; Chun Feng; Lijuan Jiang; Xun Hou; Zhanguo Wang

doi:10.1016/j.jallcom.2013.04.085

Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

Enchao Peng
, Xiaoliang Wang
, Hongling Xiao
, Cuimei Wang
, Haibo Yin
, Hong Chen
, Chun Feng
, Lijuan Jiang
, Xun Hou
, Zhanguo Wang

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG.

Original language	English
Pages (from-to)	48-53
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	576
DOIs	https://doi.org/10.1016/j.jallcom.2013.04.085
State	Published - 2013
Externally published	Yes

Keywords

Electronic properties
Heterojunctions
Nitride materials
Semiconductors

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10.1016/j.jallcom.2013.04.085

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@article{dfdb7d003c454a5d831a62253b1d22ec,

title = "Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer",

abstract = "This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG.",

keywords = "Electronic properties, Heterojunctions, Nitride materials, Semiconductors",

author = "Enchao Peng and Xiaoliang Wang and Hongling Xiao and Cuimei Wang and Haibo Yin and Hong Chen and Chun Feng and Lijuan Jiang and Xun Hou and Zhanguo Wang",

year = "2013",

doi = "10.1016/j.jallcom.2013.04.085",

language = "英语",

volume = "576",

pages = "48--53",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

AU - Peng, Enchao

AU - Wang, Xiaoliang

AU - Xiao, Hongling

AU - Wang, Cuimei

AU - Yin, Haibo

AU - Chen, Hong

AU - Feng, Chun

AU - Jiang, Lijuan

AU - Hou, Xun

AU - Wang, Zhanguo

PY - 2013

Y1 - 2013

N2 - This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG.

AB - This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG.

KW - Electronic properties

KW - Heterojunctions

KW - Nitride materials

KW - Semiconductors

UR - https://www.scopus.com/pages/publications/84877797745

U2 - 10.1016/j.jallcom.2013.04.085

DO - 10.1016/j.jallcom.2013.04.085

M3 - 文章

AN - SCOPUS:84877797745

SN - 0925-8388

VL - 576

SP - 48

EP - 53

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

Abstract

Keywords

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