Abstract
Barrier heights of Au on hydrogen-/oxygen-/fluorine-/nitrogen-terminated diamond (H-/O-/F-/N-diamond) have been investigated by X-ray photoelectron spectroscopy. All of the H-/O-/F-/N-diamond surfaces have been formed on different areas of one diamond sample. An Au film with a thickness of 4 nm was evaporated to form Au/diamond contacts. Barrier height values for Au on H-/O-/F-/N-diamond contacts were determined to be -0.19, 1.71, 2.29, and 2.39 eV, respectively. Then, the surface of Au/diamond contacts was treated by 1000 eV Ar + bombardment with different duration of time, resulting in a pinned barrier height of 1.83 eV independent of contact structures. In the end, the spatial distribution of the energy band diagram has been calculated by solving Poisson's equation.
| Original language | English |
|---|---|
| Article number | 88 |
| Journal | Coatings |
| Volume | 7 |
| Issue number | 7 |
| DOIs | |
| State | Published - 1 Jul 2017 |
Keywords
- Diamond
- Ion bombardment
- Ohmic contact
- Schottky barrier
- Surface terminations
- XPS