Barrier heights of Au on diamond with different terminations determined by X-ray photoelectron spectroscopy

  • Fengnan Li
  • , Jingwen Zhang
  • , Xiaoliang Wang
  • , Minghui Zhang
  • , Hongxing Wang

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Barrier heights of Au on hydrogen-/oxygen-/fluorine-/nitrogen-terminated diamond (H-/O-/F-/N-diamond) have been investigated by X-ray photoelectron spectroscopy. All of the H-/O-/F-/N-diamond surfaces have been formed on different areas of one diamond sample. An Au film with a thickness of 4 nm was evaporated to form Au/diamond contacts. Barrier height values for Au on H-/O-/F-/N-diamond contacts were determined to be -0.19, 1.71, 2.29, and 2.39 eV, respectively. Then, the surface of Au/diamond contacts was treated by 1000 eV Ar + bombardment with different duration of time, resulting in a pinned barrier height of 1.83 eV independent of contact structures. In the end, the spatial distribution of the energy band diagram has been calculated by solving Poisson's equation.

Original languageEnglish
Article number88
JournalCoatings
Volume7
Issue number7
DOIs
StatePublished - 1 Jul 2017

Keywords

  • Diamond
  • Ion bombardment
  • Ohmic contact
  • Schottky barrier
  • Surface terminations
  • XPS

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