Ba                         0.5                         Sr                         0.5                         TiO                         3                         /Bi                         1.5                         Zn                         1 .0                         Nb                         1.5                         TiO                         7                          multilayer thin films prepared by sol-gel method

Xin Yan; Wei Ren; Peng Shi; Xiaoqing Wu; Xiaofeng Chen; Xi Yao

doi:10.1016/j.apsusc.2008.07.045

Ba _0.5 Sr _0.5 TiO ₃ /Bi _1.5 Zn _{1 .0} Nb _1.5 TiO ₇ multilayer thin films prepared by sol-gel method

Xin Yan
, Wei Ren
, Peng Shi
, Xiaoqing Wu
, Xiaofeng Chen
, Xi Yao

Key Lab of the Ministry of Education for Process Control and Efficiency Egineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Ba _0.5 Sr _0.5 TiO ₃ /Bi _1.5 Zn _{1 .0} Nb _1.5 O ₇ (BST/BZN) multilayer thin films were prepared on Pt/Al ₂ O ₃ substrates by sol-gel method. The structure, morphology, and tunable dielectric properties of BST/BZN thin films were investigated. X-ray diffraction results showed that the structure of BST/BZN multilayer thin films was composed of a cubic BZN pyrochlore phase and a cubic BST perovskite phase. The diffraction pattern confirmed that there was no measurable reaction occurred between the BST and BZN layers. The field-emission scanning electron microscope (FESEM) showed that the surface of BST/BZN multilayer thin films was crack-free and compact. The dielectric constant and loss tangent of the BST/BZN multilayer thin films were 106 and 0.011 at 10 kHz, respectively. The dielectric tunability was 10% under dc bias field of 355 kV/cm at 10 kHz. The medium dielectric constant, low loss tangent and tunability of the dielectric constant suggest that BST/BZN multilayer thin films have potential application for tunable microwave device applications.

Original language	English
Pages (from-to)	2129-2132
Number of pages	4
Journal	Applied Surface Science
Volume	255
Issue number	5 PART 1
DOIs	https://doi.org/10.1016/j.apsusc.2008.07.045
State	Published - 30 Dec 2008
Externally published	Yes

Keywords

Dielectric materials
Ferroelectric materials
Perovskite
Polycrystalline deposition
Sol-gel processes

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10.1016/j.apsusc.2008.07.045

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Yan, X., Ren, W., Shi, P., Wu, X., Chen, X., & Yao, X. (2008). Ba _0.5 Sr _0.5 TiO ₃ /Bi _1.5 Zn _{1 .0} Nb _1.5 TiO ₇ multilayer thin films prepared by sol-gel method Applied Surface Science, 255(5 PART 1), 2129-2132. https://doi.org/10.1016/j.apsusc.2008.07.045

Yan, Xin ; Ren, Wei ; Shi, Peng et al. / Ba _0.5 Sr _0.5 TiO ₃ /Bi _1.5 Zn _{1 .0} Nb _1.5 TiO ₇ multilayer thin films prepared by sol-gel method In: Applied Surface Science. 2008 ; Vol. 255, No. 5 PART 1. pp. 2129-2132.

@article{f2734604338f40c3a711b10c09360a7a,

title = " Ba 0.5 Sr 0.5 TiO 3 /Bi 1.5 Zn 1 .0 Nb 1.5 TiO 7 multilayer thin films prepared by sol-gel method ",

abstract = " Ba 0.5 Sr 0.5 TiO 3 /Bi 1.5 Zn 1 .0 Nb 1.5 O 7 (BST/BZN) multilayer thin films were prepared on Pt/Al 2 O 3 substrates by sol-gel method. The structure, morphology, and tunable dielectric properties of BST/BZN thin films were investigated. X-ray diffraction results showed that the structure of BST/BZN multilayer thin films was composed of a cubic BZN pyrochlore phase and a cubic BST perovskite phase. The diffraction pattern confirmed that there was no measurable reaction occurred between the BST and BZN layers. The field-emission scanning electron microscope (FESEM) showed that the surface of BST/BZN multilayer thin films was crack-free and compact. The dielectric constant and loss tangent of the BST/BZN multilayer thin films were 106 and 0.011 at 10 kHz, respectively. The dielectric tunability was 10\% under dc bias field of 355 kV/cm at 10 kHz. The medium dielectric constant, low loss tangent and tunability of the dielectric constant suggest that BST/BZN multilayer thin films have potential application for tunable microwave device applications.",

keywords = "Dielectric materials, Ferroelectric materials, Perovskite, Polycrystalline deposition, Sol-gel processes",

author = "Xin Yan and Wei Ren and Peng Shi and Xiaoqing Wu and Xiaofeng Chen and Xi Yao",

year = "2008",

month = dec,

day = "30",

doi = "10.1016/j.apsusc.2008.07.045",

language = "英语",

volume = "255",

pages = "2129--2132",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "5 PART 1",

}

Yan, X, Ren, W , Shi, P, Wu, X, Chen, X & Yao, X 2008, ' Ba _0.5 Sr _0.5 TiO ₃ /Bi _1.5 Zn _{1 .0} Nb _1.5 TiO ₇ multilayer thin films prepared by sol-gel method ', Applied Surface Science, vol. 255, no. 5 PART 1, pp. 2129-2132. https://doi.org/10.1016/j.apsusc.2008.07.045

Ba _0.5 Sr _0.5 TiO ₃ /Bi _1.5 Zn _{1 .0} Nb _1.5 TiO ₇ multilayer thin films prepared by sol-gel method . / Yan, Xin; Ren, Wei ; Shi, Peng et al.
In: Applied Surface Science, Vol. 255, No. 5 PART 1, 30.12.2008, p. 2129-2132.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Ba 0.5 Sr 0.5 TiO 3 /Bi 1.5 Zn 1 .0 Nb 1.5 TiO 7 multilayer thin films prepared by sol-gel method

AU - Yan, Xin

AU - Ren, Wei

AU - Shi, Peng

AU - Wu, Xiaoqing

AU - Chen, Xiaofeng

AU - Yao, Xi

PY - 2008/12/30

Y1 - 2008/12/30

N2 - Ba 0.5 Sr 0.5 TiO 3 /Bi 1.5 Zn 1 .0 Nb 1.5 O 7 (BST/BZN) multilayer thin films were prepared on Pt/Al 2 O 3 substrates by sol-gel method. The structure, morphology, and tunable dielectric properties of BST/BZN thin films were investigated. X-ray diffraction results showed that the structure of BST/BZN multilayer thin films was composed of a cubic BZN pyrochlore phase and a cubic BST perovskite phase. The diffraction pattern confirmed that there was no measurable reaction occurred between the BST and BZN layers. The field-emission scanning electron microscope (FESEM) showed that the surface of BST/BZN multilayer thin films was crack-free and compact. The dielectric constant and loss tangent of the BST/BZN multilayer thin films were 106 and 0.011 at 10 kHz, respectively. The dielectric tunability was 10% under dc bias field of 355 kV/cm at 10 kHz. The medium dielectric constant, low loss tangent and tunability of the dielectric constant suggest that BST/BZN multilayer thin films have potential application for tunable microwave device applications.

AB - Ba 0.5 Sr 0.5 TiO 3 /Bi 1.5 Zn 1 .0 Nb 1.5 O 7 (BST/BZN) multilayer thin films were prepared on Pt/Al 2 O 3 substrates by sol-gel method. The structure, morphology, and tunable dielectric properties of BST/BZN thin films were investigated. X-ray diffraction results showed that the structure of BST/BZN multilayer thin films was composed of a cubic BZN pyrochlore phase and a cubic BST perovskite phase. The diffraction pattern confirmed that there was no measurable reaction occurred between the BST and BZN layers. The field-emission scanning electron microscope (FESEM) showed that the surface of BST/BZN multilayer thin films was crack-free and compact. The dielectric constant and loss tangent of the BST/BZN multilayer thin films were 106 and 0.011 at 10 kHz, respectively. The dielectric tunability was 10% under dc bias field of 355 kV/cm at 10 kHz. The medium dielectric constant, low loss tangent and tunability of the dielectric constant suggest that BST/BZN multilayer thin films have potential application for tunable microwave device applications.

KW - Dielectric materials

KW - Ferroelectric materials

KW - Perovskite

KW - Polycrystalline deposition

KW - Sol-gel processes

UR - https://www.scopus.com/pages/publications/56849089263

U2 - 10.1016/j.apsusc.2008.07.045

DO - 10.1016/j.apsusc.2008.07.045

M3 - 文章

AN - SCOPUS:56849089263

SN - 0169-4332

VL - 255

SP - 2129

EP - 2132

JO - Applied Surface Science

JF - Applied Surface Science

IS - 5 PART 1

ER -

Yan X, Ren W , Shi P, Wu X, Chen X, Yao X. Ba _0.5 Sr _0.5 TiO ₃ /Bi _1.5 Zn _{1 .0} Nb _1.5 TiO ₇ multilayer thin films prepared by sol-gel method Applied Surface Science. 2008 Dec 30;255(5 PART 1):2129-2132. doi: 10.1016/j.apsusc.2008.07.045

Ba _0.5 Sr _0.5 TiO ₃ /Bi _1.5 Zn _{1 .0} Nb _1.5 TiO ₇ multilayer thin films prepared by sol-gel method

Abstract

Keywords

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