Attempting Ultralow Turn-off Loss of SiC MOSFET with Active Gate Charge Control Technique

Yuze Zheng; Xu Cheng; Fan Zhang; Jiajin Li; Xiaolu Zhang; Xuhui Song

doi:10.1109/CIEEC69682.2026.11572307

Attempting Ultralow Turn-off Loss of SiC MOSFET with Active Gate Charge Control Technique

Yuze Zheng
, Xu Cheng
, Fan Zhang
, Jiajin Li
, Xiaolu Zhang
, Xuhui Song

School of Electrical Engineering
China Southern Power Grid

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper analyzes the turn-off process of SiC MOSFETs, and derives the Miller effect gain coefficient of turn-off transient based on output characteristic in saturation region. Furthermore, the drain-source voltage slew rate that can be generated by the ideal MOSFET model ignoring junction capacitance is derived, the relationship between channel current, drain current, and junction capacitance is analyzed. Therefore, the maximum drain-source voltage slew rate of actual MOSFET is obtained. Hence, the conditions for achieving quasi zero current turn-off are obtained, and is satisfied by controlling gate charge to provide sufficient turn-off current. Double-pulse tests are conducted under an DC voltage of 600 V. At a load current of 300 A, compared with conventional gate drive, proposed active gate driver can reduce turn-off thermal loss by 80%, with no significant change in voltage and current oscillations.

Original language	English
Title of host publication	Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1558-1563
Number of pages	6
ISBN (Electronic)	9798331549558
DOIs	https://doi.org/10.1109/CIEEC69682.2026.11572307
State	Published - 2026
Externally published	Yes
Event	9th International Electrical and Energy Conference, CIEEC 2026 - Tianjin, China Duration: 15 May 2026 → 17 May 2026

Publication series

Name	Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026

Conference

Conference	9th International Electrical and Energy Conference, CIEEC 2026
Country/Territory	China
City	Tianjin
Period	15/05/26 → 17/05/26

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

active gate driver
gate charge
quasi zero current
SiC MOSFET
slew rate

Access to Document

10.1109/CIEEC69682.2026.11572307

Cite this

Zheng, Y., Cheng, X., Zhang, F., Li, J., Zhang, X., & Song, X. (2026). Attempting Ultralow Turn-off Loss of SiC MOSFET with Active Gate Charge Control Technique. In Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026 (pp. 1558-1563). (Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CIEEC69682.2026.11572307

Zheng, Yuze ; Cheng, Xu ; Zhang, Fan et al. / Attempting Ultralow Turn-off Loss of SiC MOSFET with Active Gate Charge Control Technique. Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026. Institute of Electrical and Electronics Engineers Inc., 2026. pp. 1558-1563 (Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026).

@inproceedings{bb8c1a624f2845e193358479523919a0,

title = "Attempting Ultralow Turn-off Loss of SiC MOSFET with Active Gate Charge Control Technique",

abstract = "This paper analyzes the turn-off process of SiC MOSFETs, and derives the Miller effect gain coefficient of turn-off transient based on output characteristic in saturation region. Furthermore, the drain-source voltage slew rate that can be generated by the ideal MOSFET model ignoring junction capacitance is derived, the relationship between channel current, drain current, and junction capacitance is analyzed. Therefore, the maximum drain-source voltage slew rate of actual MOSFET is obtained. Hence, the conditions for achieving quasi zero current turn-off are obtained, and is satisfied by controlling gate charge to provide sufficient turn-off current. Double-pulse tests are conducted under an DC voltage of 600 V. At a load current of 300 A, compared with conventional gate drive, proposed active gate driver can reduce turn-off thermal loss by 80\%, with no significant change in voltage and current oscillations.",

keywords = "active gate driver, gate charge, quasi zero current, SiC MOSFET, slew rate",

author = "Yuze Zheng and Xu Cheng and Fan Zhang and Jiajin Li and Xiaolu Zhang and Xuhui Song",

note = "Publisher Copyright: {\textcopyright} 2026 IEEE.; 9th International Electrical and Energy Conference, CIEEC 2026 ; Conference date: 15-05-2026 Through 17-05-2026",

year = "2026",

doi = "10.1109/CIEEC69682.2026.11572307",

language = "英语",

series = "Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1558--1563",

booktitle = "Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026",

}

Zheng, Y, Cheng, X, Zhang, F, Li, J, Zhang, X & Song, X 2026, Attempting Ultralow Turn-off Loss of SiC MOSFET with Active Gate Charge Control Technique. in Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026. Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026, Institute of Electrical and Electronics Engineers Inc., pp. 1558-1563, 9th International Electrical and Energy Conference, CIEEC 2026, Tianjin, China, 15/05/26. https://doi.org/10.1109/CIEEC69682.2026.11572307

Attempting Ultralow Turn-off Loss of SiC MOSFET with Active Gate Charge Control Technique. / Zheng, Yuze; Cheng, Xu; Zhang, Fan et al.
Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026. Institute of Electrical and Electronics Engineers Inc., 2026. p. 1558-1563 (Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Attempting Ultralow Turn-off Loss of SiC MOSFET with Active Gate Charge Control Technique

AU - Zheng, Yuze

AU - Cheng, Xu

AU - Zhang, Fan

AU - Li, Jiajin

AU - Zhang, Xiaolu

AU - Song, Xuhui

PY - 2026

Y1 - 2026

N2 - This paper analyzes the turn-off process of SiC MOSFETs, and derives the Miller effect gain coefficient of turn-off transient based on output characteristic in saturation region. Furthermore, the drain-source voltage slew rate that can be generated by the ideal MOSFET model ignoring junction capacitance is derived, the relationship between channel current, drain current, and junction capacitance is analyzed. Therefore, the maximum drain-source voltage slew rate of actual MOSFET is obtained. Hence, the conditions for achieving quasi zero current turn-off are obtained, and is satisfied by controlling gate charge to provide sufficient turn-off current. Double-pulse tests are conducted under an DC voltage of 600 V. At a load current of 300 A, compared with conventional gate drive, proposed active gate driver can reduce turn-off thermal loss by 80%, with no significant change in voltage and current oscillations.

AB - This paper analyzes the turn-off process of SiC MOSFETs, and derives the Miller effect gain coefficient of turn-off transient based on output characteristic in saturation region. Furthermore, the drain-source voltage slew rate that can be generated by the ideal MOSFET model ignoring junction capacitance is derived, the relationship between channel current, drain current, and junction capacitance is analyzed. Therefore, the maximum drain-source voltage slew rate of actual MOSFET is obtained. Hence, the conditions for achieving quasi zero current turn-off are obtained, and is satisfied by controlling gate charge to provide sufficient turn-off current. Double-pulse tests are conducted under an DC voltage of 600 V. At a load current of 300 A, compared with conventional gate drive, proposed active gate driver can reduce turn-off thermal loss by 80%, with no significant change in voltage and current oscillations.

KW - active gate driver

KW - gate charge

KW - quasi zero current

KW - SiC MOSFET

KW - slew rate

UR - https://www.scopus.com/pages/publications/105044603471

U2 - 10.1109/CIEEC69682.2026.11572307

DO - 10.1109/CIEEC69682.2026.11572307

M3 - 会议稿件

AN - SCOPUS:105044603471

T3 - Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026

SP - 1558

EP - 1563

BT - Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 9th International Electrical and Energy Conference, CIEEC 2026

Y2 - 15 May 2026 through 17 May 2026

ER -

Zheng Y, Cheng X, Zhang F, Li J, Zhang X, Song X. Attempting Ultralow Turn-off Loss of SiC MOSFET with Active Gate Charge Control Technique. In Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026. Institute of Electrical and Electronics Engineers Inc. 2026. p. 1558-1563. (Proceedings of 2026 IEEE 9th International Electrical and Energy Conference, CIEEC 2026). doi: 10.1109/CIEEC69682.2026.11572307

Attempting Ultralow Turn-off Loss of SiC MOSFET with Active Gate Charge Control Technique

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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