Asphaltene adsorption of Co3O4 nanoparticles modified by SiO2 film

  • Tianguan Wang
  • , Xiankang Zhong
  • , Zhi Zhang
  • , Xi Yuan
  • , Li Zhou
  • , Ziqi Zheng
  • , Abdolreza Farhadian
  • , Junying Hu

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Asphaltene precipitation could have several negative consequences, including production decline, wellbore plugging, and even severe safety concerns. Therefore, an effective strategy of asphaltene adsorption is highly significant. Nanoparticles possess a large surface area, showing a high adsorption potential for asphaltene. However, the self-aggregation property limits its adsorption capacity. In this work, the Co3O4 nanoparticles were ingeniously selected as an inhibitor of asphaltene precipitation, and a porous SiO2 film was formed via the sol-gel method. The evaluation experiments indicated that the SiO2 film significantly reduced the self-aggregation. Hence, the specific surface area of nanoparticles increased from 20.87 m2/g to 29.25 m2/g. Meanwhile, molecular dynamics simulations confirmed that the modified nanoparticles exhibited 1.6 times higher adsorption energy and a lower mean square displacement than the fundamental nanoparticles. With these improvements, the Co3O4-SiO2 nanoparticles developed greater stability and dispersion, which raised the adsorption of the nanoparticles on asphaltene from 1.24 mg/m2 to 1.53 mg/m2, presenting a considerable adsorption capacity. This study broadens the selection of nanoparticles for asphaltene adsorption. It demonstrates the improvement of nanoparticles by porous SiO2 film in various aspects, which can provide a solution for inhibiting asphaltene precipitation in oil fields as well as guidance for subsequent functionalization of nanoparticles.

Original languageEnglish
Article number154267
JournalApplied Surface Science
Volume602
DOIs
StatePublished - 15 Nov 2022
Externally publishedYes

Keywords

  • Adsorption
  • Asphaltene precipitation
  • Nanoparticles
  • SiO film

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