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Artificial synaptic plasticity and associative learning of the nanostructured MoS2/Cu2S heterojunction based memristor

  • Yulong Yang
  • , Bai Sun
  • , Shuangsuo Mao
  • , Jiajia Qin
  • , Wentao Hou
  • , Mingnan Liu
  • , Zhaowei Rao
  • , Wei Lin
  • , Yong Zhao
  • Fujian Normal University
  • Guang'an Institute of Technology
  • Zhejiang University of Technology
  • Southwest Jiaotong University

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Based on the isomorphism between memristor and biosynapse, memristor can be applied to simulate the artificial synaptic behavior, thus the memristor can achieve brain-like neuromorphic computing. In this work, MoS2 film was deposited on a Cu2S/Ti substrate to successfully fabricating an Ag/MoS2/Cu2S/Ti heterostructure based memristor. Further, it was found the current-voltage (I-V) curve of the device exhibits typical non-volatile resistance switching characteristics, and maintained stable cycling performance and high switching ratio. By analyzing the formation and rupture of Ag+ ions and sulfur vacancy conductive filaments, the charge transfer mechanism of the Ag/MoS2/Cu2S/Ti memristor was investigated. By applying specific pulse sequences to the device, various biosynaptic functions, such as short-term potentiation (PPF), long-term potentiation/depression (LTP/D), and spike-timing dependent plasticity (STDP), were successfully simulated. Finally, in the associative learning-Pavlov's dog experiment simulation, the device requires only a few training iterations to re-establish the conditioned response, demonstrating excellent learning capabilities.

Original languageEnglish
Article number114193
JournalMaterials Research Bulletin
Volume202
DOIs
StatePublished - Sep 2026

Keywords

  • Artificial intelligence
  • Artificial synapse
  • Memristor
  • Neuromorphic computing
  • Synaptic plasticity

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