Abstract
Based on the isomorphism between memristor and biosynapse, memristor can be applied to simulate the artificial synaptic behavior, thus the memristor can achieve brain-like neuromorphic computing. In this work, MoS2 film was deposited on a Cu2S/Ti substrate to successfully fabricating an Ag/MoS2/Cu2S/Ti heterostructure based memristor. Further, it was found the current-voltage (I-V) curve of the device exhibits typical non-volatile resistance switching characteristics, and maintained stable cycling performance and high switching ratio. By analyzing the formation and rupture of Ag+ ions and sulfur vacancy conductive filaments, the charge transfer mechanism of the Ag/MoS2/Cu2S/Ti memristor was investigated. By applying specific pulse sequences to the device, various biosynaptic functions, such as short-term potentiation (PPF), long-term potentiation/depression (LTP/D), and spike-timing dependent plasticity (STDP), were successfully simulated. Finally, in the associative learning-Pavlov's dog experiment simulation, the device requires only a few training iterations to re-establish the conditioned response, demonstrating excellent learning capabilities.
| Original language | English |
|---|---|
| Article number | 114193 |
| Journal | Materials Research Bulletin |
| Volume | 202 |
| DOIs | |
| State | Published - Sep 2026 |
Keywords
- Artificial intelligence
- Artificial synapse
- Memristor
- Neuromorphic computing
- Synaptic plasticity
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