Abstract
High resolution multiple-crystal multiple-reflection X-ray diffractometer has been used to record reciprocal space maps of semiconductors. Different mapping shapes correspond to different crystal quality. For GaAs/AlGaAs materials, macro curvature, micro tilt, gradient of composition, strain, relax and continuity parallel to interface have been shown qualitatively. The results can also fit for other semicondutor materials.
| Original language | English |
|---|---|
| Pages (from-to) | 1003-1006 |
| Number of pages | 4 |
| Journal | Guangzi Xuebao/Acta Photonica Sinica |
| Volume | 26 |
| Issue number | 11 |
| State | Published - 1997 |
Keywords
- AlGaAs
- Diffraction
- GaAs
- Reciprocal space
- X-ray