Application of femtosecond laser technique in single crystal diamond film separation

Fei Wang; Chao Shan; Jian Ping Yan; Jiao Fu; D. Garuma Abdisa; Tian Fei Zhu; Wei Wang; Feng Chen; Jing Wen Zhang; Hong Xing Wang; Xun Hou

doi:10.1016/j.diamond.2015.11.015

Application of femtosecond laser technique in single crystal diamond film separation

Fei Wang
, Chao Shan
, Jian Ping Yan
, Jiao Fu
, D. Garuma Abdisa
, Tian Fei Zhu
, Wei Wang
, Feng Chen
, Jing Wen Zhang
, Hong Xing Wang
, Xun Hou

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this paper, we report on an attempt to separate single crystal (SC) diamond film from diamond substrate by femtosecond laser treatment and electrochemical etching techniques. Firstly, femtosecond laser was focused on about 20 μm below the surface of diamond substrate to form a non-diamond layer. Secondly, a thick SC diamond film was grown on this substrate by microwave plasma chemical vapor deposition system. Finally, an electrochemical etching treatment was performed to separate the SC diamond film from its substrate. The results indicate that femtosecond laser technique has provided a potential way for the separation of grown diamond film from its substrate.

Original language	English
Pages (from-to)	69-74
Number of pages	6
Journal	Diamond and Related Materials
Volume	63
DOIs	https://doi.org/10.1016/j.diamond.2015.11.015
State	Published - 1 Mar 2016

Keywords

Chemical vapor deposition
Diamond film
Semiconductor
Single crystal growth

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10.1016/j.diamond.2015.11.015

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title = "Application of femtosecond laser technique in single crystal diamond film separation",

abstract = "In this paper, we report on an attempt to separate single crystal (SC) diamond film from diamond substrate by femtosecond laser treatment and electrochemical etching techniques. Firstly, femtosecond laser was focused on about 20 μm below the surface of diamond substrate to form a non-diamond layer. Secondly, a thick SC diamond film was grown on this substrate by microwave plasma chemical vapor deposition system. Finally, an electrochemical etching treatment was performed to separate the SC diamond film from its substrate. The results indicate that femtosecond laser technique has provided a potential way for the separation of grown diamond film from its substrate.",

keywords = "Chemical vapor deposition, Diamond film, Semiconductor, Single crystal growth",

author = "Fei Wang and Chao Shan and Yan, \{Jian Ping\} and Jiao Fu and \{Garuma Abdisa\}, D. and Zhu, \{Tian Fei\} and Wei Wang and Feng Chen and Zhang, \{Jing Wen\} and Wang, \{Hong Xing\} and Xun Hou",

year = "2016",

month = mar,

day = "1",

doi = "10.1016/j.diamond.2015.11.015",

language = "英语",

volume = "63",

pages = "69--74",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Application of femtosecond laser technique in single crystal diamond film separation

AU - Wang, Fei

AU - Shan, Chao

AU - Yan, Jian Ping

AU - Fu, Jiao

AU - Garuma Abdisa, D.

AU - Zhu, Tian Fei

AU - Wang, Wei

AU - Chen, Feng

AU - Zhang, Jing Wen

AU - Wang, Hong Xing

AU - Hou, Xun

PY - 2016/3/1

Y1 - 2016/3/1

N2 - In this paper, we report on an attempt to separate single crystal (SC) diamond film from diamond substrate by femtosecond laser treatment and electrochemical etching techniques. Firstly, femtosecond laser was focused on about 20 μm below the surface of diamond substrate to form a non-diamond layer. Secondly, a thick SC diamond film was grown on this substrate by microwave plasma chemical vapor deposition system. Finally, an electrochemical etching treatment was performed to separate the SC diamond film from its substrate. The results indicate that femtosecond laser technique has provided a potential way for the separation of grown diamond film from its substrate.

AB - In this paper, we report on an attempt to separate single crystal (SC) diamond film from diamond substrate by femtosecond laser treatment and electrochemical etching techniques. Firstly, femtosecond laser was focused on about 20 μm below the surface of diamond substrate to form a non-diamond layer. Secondly, a thick SC diamond film was grown on this substrate by microwave plasma chemical vapor deposition system. Finally, an electrochemical etching treatment was performed to separate the SC diamond film from its substrate. The results indicate that femtosecond laser technique has provided a potential way for the separation of grown diamond film from its substrate.

KW - Chemical vapor deposition

KW - Diamond film

KW - Semiconductor

KW - Single crystal growth

UR - https://www.scopus.com/pages/publications/84959237954

U2 - 10.1016/j.diamond.2015.11.015

DO - 10.1016/j.diamond.2015.11.015

M3 - 文章

AN - SCOPUS:84959237954

SN - 0925-9635

VL - 63

SP - 69

EP - 74

JO - Diamond and Related Materials

JF - Diamond and Related Materials

ER -

Application of femtosecond laser technique in single crystal diamond film separation

Abstract

Keywords

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