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Application of BEM to high-voltage junction termination

  • Zilu Wu
  • , Yumin Gao
  • , Jinsheng Luo
  • , Xun Hou
  • , Guofu Chen
  • CAS - Xi'an Institute of Optics and Precision Mechanics
  • Xi'an Jiaotong University

Research output: Contribution to journalArticlepeer-review

Abstract

Ideas for using the boundary element method (BEM) with the concept of critical electric field for simulation of high-voltage junction termination are introduced. Approaches for dealing with interface charges, depleted regions, and metal field plates are presented. Rules used to develop and apply the BEM program are given. Simulation of one silicon-on-insulator diode is performed and the results are compared with those obtained using the finite difference method.

Original languageEnglish
Pages (from-to)1218-1225
Number of pages8
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume20
Issue number10
DOIs
StatePublished - Oct 2001
Externally publishedYes

Keywords

  • Boundary element method
  • Critical electric field
  • Junction termination
  • SOI
  • Simulation

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