Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo2O5.5+δ Thin Films on (110) NdGaO3

Chunrui Ma; Dong Han; Ming Liu; Gregory Collins; Haibin Wang; Xing Xu; Yuan Lin; Jiechao Jiang; Shengbai Zhang; Chonglin Chen

doi:10.1038/srep37337

Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo₂O_5.5+δ Thin Films on (110) NdGaO₃

Chunrui Ma
, Dong Han
, Ming Liu
, Gregory Collins
, Haibin Wang
, Xing Xu
, Yuan Lin
, Jiechao Jiang
, Shengbai Zhang
, Chonglin Chen

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Highly directional-dependent metal-insulator transition is observed in epitaxial double perovskite LaBaCo₂O_5.5+δ films. The film exhibit metallic along [100], but remain semiconducting along [010] under application of a magnetic field parallel to the surface of the film. The physical origin for the properties is identified as in-plane tensile strain arising from oxygen vacancies. First-principle calculations suggested the tensile strain drastically alters the band gap, and the vanishing gap opens up [100] conduction channels for Fermi-surface electrons. Our observation of strain-induced highly directional-dependent metal-insulator transition may open up new dimension for multifunctional devices.

Original language	English
Article number	37337
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep37337
State	Published - 21 Nov 2016

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title = "Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo2O5.5+δ Thin Films on (110) NdGaO3",

abstract = "Highly directional-dependent metal-insulator transition is observed in epitaxial double perovskite LaBaCo2O5.5+δ films. The film exhibit metallic along [100], but remain semiconducting along [010] under application of a magnetic field parallel to the surface of the film. The physical origin for the properties is identified as in-plane tensile strain arising from oxygen vacancies. First-principle calculations suggested the tensile strain drastically alters the band gap, and the vanishing gap opens up [100] conduction channels for Fermi-surface electrons. Our observation of strain-induced highly directional-dependent metal-insulator transition may open up new dimension for multifunctional devices.",

author = "Chunrui Ma and Dong Han and Ming Liu and Gregory Collins and Haibin Wang and Xing Xu and Yuan Lin and Jiechao Jiang and Shengbai Zhang and Chonglin Chen",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2016.",

year = "2016",

month = nov,

day = "21",

doi = "10.1038/srep37337",

language = "英语",

volume = "6",

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TY - JOUR

T1 - Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo2O5.5+δ Thin Films on (110) NdGaO3

AU - Ma, Chunrui

AU - Han, Dong

AU - Liu, Ming

AU - Collins, Gregory

AU - Wang, Haibin

AU - Xu, Xing

AU - Lin, Yuan

AU - Jiang, Jiechao

AU - Zhang, Shengbai

AU - Chen, Chonglin

PY - 2016/11/21

Y1 - 2016/11/21

N2 - Highly directional-dependent metal-insulator transition is observed in epitaxial double perovskite LaBaCo2O5.5+δ films. The film exhibit metallic along [100], but remain semiconducting along [010] under application of a magnetic field parallel to the surface of the film. The physical origin for the properties is identified as in-plane tensile strain arising from oxygen vacancies. First-principle calculations suggested the tensile strain drastically alters the band gap, and the vanishing gap opens up [100] conduction channels for Fermi-surface electrons. Our observation of strain-induced highly directional-dependent metal-insulator transition may open up new dimension for multifunctional devices.

AB - Highly directional-dependent metal-insulator transition is observed in epitaxial double perovskite LaBaCo2O5.5+δ films. The film exhibit metallic along [100], but remain semiconducting along [010] under application of a magnetic field parallel to the surface of the film. The physical origin for the properties is identified as in-plane tensile strain arising from oxygen vacancies. First-principle calculations suggested the tensile strain drastically alters the band gap, and the vanishing gap opens up [100] conduction channels for Fermi-surface electrons. Our observation of strain-induced highly directional-dependent metal-insulator transition may open up new dimension for multifunctional devices.

UR - https://www.scopus.com/pages/publications/84996561747

U2 - 10.1038/srep37337

DO - 10.1038/srep37337

M3 - 文章

AN - SCOPUS:84996561747

SN - 2045-2322

VL - 6

JO - Scientific Reports

JF - Scientific Reports

M1 - 37337

ER -

Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo₂O_5.5+δ Thin Films on (110) NdGaO₃

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