Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin films

Linglong Li; Lu Lu; Zhiguang Wang; Yanxi Li; Yonggang Yao; Dawei Zhang; Guang Yang; Jianjun Yao; Dwight Viehland; Yaodong Yang

doi:10.1038/srep09229

Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb₂O₅-NaNbO₃ thin films

Linglong Li
, Lu Lu
, Zhiguang Wang
, Yanxi Li
, Yonggang Yao
, Dawei Zhang
, Guang Yang
, Jianjun Yao
, Dwight Viehland
, Yaodong Yang

School of Mechanical Engineering

Xi'an Jiaotong University
Virginia Polytechnic Institute and State University
Oxford Instruments Group Plc

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb₂O₅-NaNbO₃ nanocomposite thin films on SrRuO₃-buffered LaAlO₃ substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications.

Original language	English
Article number	9229
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep09229
State	Published - 17 Mar 2015

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title = "Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin films",

abstract = "Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb2O5-NaNbO3 nanocomposite thin films on SrRuO3-buffered LaAlO3 substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications.",

author = "Linglong Li and Lu Lu and Zhiguang Wang and Yanxi Li and Yonggang Yao and Dawei Zhang and Guang Yang and Jianjun Yao and Dwight Viehland and Yaodong Yang",

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T1 - Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin films

AU - Li, Linglong

AU - Lu, Lu

AU - Wang, Zhiguang

AU - Li, Yanxi

AU - Yao, Yonggang

AU - Zhang, Dawei

AU - Yang, Guang

AU - Yao, Jianjun

AU - Viehland, Dwight

AU - Yang, Yaodong

PY - 2015/3/17

Y1 - 2015/3/17

N2 - Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb2O5-NaNbO3 nanocomposite thin films on SrRuO3-buffered LaAlO3 substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications.

AB - Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb2O5-NaNbO3 nanocomposite thin films on SrRuO3-buffered LaAlO3 substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications.

UR - https://www.scopus.com/pages/publications/84924973819

U2 - 10.1038/srep09229

DO - 10.1038/srep09229

M3 - 文章

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SN - 2045-2322

VL - 5

JO - Scientific Reports

JF - Scientific Reports

M1 - 9229

ER -

Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb₂O₅-NaNbO₃ thin films

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