@inproceedings{aa9f6b4c98ee4fbe989e880550bd99e3,
title = "Analytical loss model of low voltage enhancement mode GaN HEMTs",
abstract = "An analytical model is proposed in this paper to calculate the switching loss of low voltage enhancement mode Gallium Nitride high electron mobility transistors (eGaN HEMTs). The switching process is illustrated in detail. The switching loss is obtained by solving the equivalent circuits during the switching transition. A good agreement is shown between the analytical model and Spice simulation results. In addition, in order to accurately measure the current transition waveform, a novel current measuring method based on magnetic coupling is proposed. Finally, a buck converter is designed to validate the accuracy of the proposed model.",
author = "Kangping Wang and Xu Yang and Xiangjun Zeng and Xiaoling Yu and Hongchang Li and Yixuan Guo and Bing Gao and Huan Ma",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",
year = "2014",
month = nov,
day = "11",
doi = "10.1109/ECCE.2014.6953381",
language = "英语",
series = "2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "100--105",
booktitle = "2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014",
}