@inproceedings{b74b2f543c144d72a4341cbd0a10404d,
title = "Analysis of series SiC MOSFETs stack using a single standard gate driver",
abstract = "An overview of existing MOSFET series topologies with single gate driver is given and a newly-designed topology using two SiC MOSFET is proposed in this paper. Thereafter, operation principles including both static sate and switching transitions are analyzed. The LTspice simulation in the last part validate the analysis and show the availability of the SiC MOSFET series topology using single gate driver.",
keywords = "SiC MOSFET, gate driver, series connection, voltage distribution",
author = "Yu Ren and Xu Yang and Fan Zhang and Wenjie Chen",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 8th IEEE International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016 ; Conference date: 22-05-2016 Through 26-05-2016",
year = "2016",
month = jul,
day = "13",
doi = "10.1109/IPEMC.2016.7512544",
language = "英语",
series = "2016 IEEE 8th International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1664--1668",
booktitle = "2016 IEEE 8th International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016",
}