TY - GEN
T1 - Analysis and Simulation of the Influence of 'V' Beam on the Impact Resistance of Micro Quartz Tuning Gyroscopes
AU - Bai, Bing
AU - Zhao, Yulong
AU - Li, Cun
AU - Han, Chao
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/10
Y1 - 2019/10
N2 - For the effect of the anchor point and the vibration structure connecting beam - V beam in the micro quartz tuning fork gyroscope, based on the normalized shock response spectrum in the International Organization for Standardization, the finite element analysis simulation software was used to analyze the stress of different V beam thickness parameters when subjected to 1500g and 2 ms half sine impact in six directions. The simulation results show that when the thickness is 80 μm, the max stress is 94.721 MPa, and when the thickness is 75 μm, the max stress is 100.512 MPa. Due to the breaking strength of the quartz material (95 MPa), the minimum thickness of V beam is about 80 μm. And the gyroscope with V beam thickness of 80 μm is verified by impact test.
AB - For the effect of the anchor point and the vibration structure connecting beam - V beam in the micro quartz tuning fork gyroscope, based on the normalized shock response spectrum in the International Organization for Standardization, the finite element analysis simulation software was used to analyze the stress of different V beam thickness parameters when subjected to 1500g and 2 ms half sine impact in six directions. The simulation results show that when the thickness is 80 μm, the max stress is 94.721 MPa, and when the thickness is 75 μm, the max stress is 100.512 MPa. Due to the breaking strength of the quartz material (95 MPa), the minimum thickness of V beam is about 80 μm. And the gyroscope with V beam thickness of 80 μm is verified by impact test.
KW - half sine impact
KW - impact test
KW - modeling and simulation
KW - quartz tuning fork gyroscope
KW - shock response spectrum
UR - https://www.scopus.com/pages/publications/85078697554
U2 - 10.1109/SENSORS43011.2019.8956788
DO - 10.1109/SENSORS43011.2019.8956788
M3 - 会议稿件
AN - SCOPUS:85078697554
T3 - Proceedings of IEEE Sensors
BT - 2019 IEEE Sensors, SENSORS 2019 - Conference Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 18th IEEE Sensors, SENSORS 2019
Y2 - 27 October 2019 through 30 October 2019
ER -