An optoelectronic resistive switching memory behavior of Ag/α-SnWO4/FTO device

Pengde Han; Bai Sun; Sen Cheng; Fangli Yu; Baoxiang Jiao; Qisheng Wu

doi:10.1016/j.jallcom.2016.04.268

An optoelectronic resistive switching memory behavior of Ag/α-SnWO₄/FTO device

Pengde Han
, Bai Sun
, Sen Cheng
, Fangli Yu
, Baoxiang Jiao
, Qisheng Wu

Yancheng Institute of Technology
Southwest University

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

It is known to all of us that the resistive switching memory behavior of metal-oxide-metal structure device is a fascinating candidate for next generation nonvolatile memories. In this work, α-SnWO₄ nanoparticles were synthesized by a hydrothermal process. Further, a resistive switching memory device with Ag/α-SnWO₄/FTO structure is demonstrated. The device presents an optoelectronic bipolar resistive switching memory behavior at room temperature. This study is useful for exploring multifunctional materials and their applications in optoelectronic nonvolatile memory devices.

Original language	English
Pages (from-to)	516-521
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	681
DOIs	https://doi.org/10.1016/j.jallcom.2016.04.268
State	Published - 5 Oct 2016
Externally published	Yes

Keywords

Memory device
Memristor
Optoelectronic
RRAM
Resistive switching

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10.1016/j.jallcom.2016.04.268

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abstract = "It is known to all of us that the resistive switching memory behavior of metal-oxide-metal structure device is a fascinating candidate for next generation nonvolatile memories. In this work, α-SnWO4 nanoparticles were synthesized by a hydrothermal process. Further, a resistive switching memory device with Ag/α-SnWO4/FTO structure is demonstrated. The device presents an optoelectronic bipolar resistive switching memory behavior at room temperature. This study is useful for exploring multifunctional materials and their applications in optoelectronic nonvolatile memory devices.",

keywords = "Memory device, Memristor, Optoelectronic, RRAM, Resistive switching",

author = "Pengde Han and Bai Sun and Sen Cheng and Fangli Yu and Baoxiang Jiao and Qisheng Wu",

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T1 - An optoelectronic resistive switching memory behavior of Ag/α-SnWO4/FTO device

AU - Han, Pengde

AU - Sun, Bai

AU - Cheng, Sen

AU - Yu, Fangli

AU - Jiao, Baoxiang

AU - Wu, Qisheng

PY - 2016/10/5

Y1 - 2016/10/5

N2 - It is known to all of us that the resistive switching memory behavior of metal-oxide-metal structure device is a fascinating candidate for next generation nonvolatile memories. In this work, α-SnWO4 nanoparticles were synthesized by a hydrothermal process. Further, a resistive switching memory device with Ag/α-SnWO4/FTO structure is demonstrated. The device presents an optoelectronic bipolar resistive switching memory behavior at room temperature. This study is useful for exploring multifunctional materials and their applications in optoelectronic nonvolatile memory devices.

AB - It is known to all of us that the resistive switching memory behavior of metal-oxide-metal structure device is a fascinating candidate for next generation nonvolatile memories. In this work, α-SnWO4 nanoparticles were synthesized by a hydrothermal process. Further, a resistive switching memory device with Ag/α-SnWO4/FTO structure is demonstrated. The device presents an optoelectronic bipolar resistive switching memory behavior at room temperature. This study is useful for exploring multifunctional materials and their applications in optoelectronic nonvolatile memory devices.

KW - Memory device

KW - Memristor

KW - Optoelectronic

KW - RRAM

KW - Resistive switching

UR - https://www.scopus.com/pages/publications/84966263736

U2 - 10.1016/j.jallcom.2016.04.268

DO - 10.1016/j.jallcom.2016.04.268

M3 - 文章

AN - SCOPUS:84966263736

SN - 0925-8388

VL - 681

SP - 516

EP - 521

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

An optoelectronic resistive switching memory behavior of Ag/α-SnWO₄/FTO device

Abstract

Keywords

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