Abstract
This paper carefully discusses the interaction between the bus capacitors and the parasitic inductances in an integrated DC-DC converter module. The design principles of the bus capacitors are presented and validated by simulation results. In addition, an optimized PCB layout with split bus capacitors is proposed for enhancement-mode Gallium-Nitride (eGaN) transistors based integrated DC-DC power converter module. The power loop inductance is about 0.2nH extracted by Maxwell 3D simulation, which is reduced by 50% than that of the reported best layout. The results are validated by a buck converter operating at input voltage of 12V, output voltage of 3.3V, output current of 8A, and switching frequency of 1MHz.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - 2014 International Power Electronics and Application Conference and Exposition, IEEE PEAC 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 446-450 |
| Number of pages | 5 |
| ISBN (Electronic) | 9781479967674 |
| DOIs | |
| State | Published - 9 Feb 2014 |
| Event | 2014 International Power Electronics and Application Conference and Exposition, IEEE PEAC 2014 - Shanghai, China Duration: 5 Nov 2014 → 8 Nov 2014 |
Publication series
| Name | Proceedings - 2014 International Power Electronics and Application Conference and Exposition, IEEE PEAC 2014 |
|---|
Conference
| Conference | 2014 International Power Electronics and Application Conference and Exposition, IEEE PEAC 2014 |
|---|---|
| Country/Territory | China |
| City | Shanghai |
| Period | 5/11/14 → 8/11/14 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- DC-DC power converter
- Gallium nitride
- Integrated module
- Layout
- Parasitic inductance
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