An optimized layout with split bus capacitors in eGaN-based integrated DC-DC converter module

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6 Scopus citations

Abstract

This paper carefully discusses the interaction between the bus capacitors and the parasitic inductances in an integrated DC-DC converter module. The design principles of the bus capacitors are presented and validated by simulation results. In addition, an optimized PCB layout with split bus capacitors is proposed for enhancement-mode Gallium-Nitride (eGaN) transistors based integrated DC-DC power converter module. The power loop inductance is about 0.2nH extracted by Maxwell 3D simulation, which is reduced by 50% than that of the reported best layout. The results are validated by a buck converter operating at input voltage of 12V, output voltage of 3.3V, output current of 8A, and switching frequency of 1MHz.

Original languageEnglish
Title of host publicationProceedings - 2014 International Power Electronics and Application Conference and Exposition, IEEE PEAC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages446-450
Number of pages5
ISBN (Electronic)9781479967674
DOIs
StatePublished - 9 Feb 2014
Event2014 International Power Electronics and Application Conference and Exposition, IEEE PEAC 2014 - Shanghai, China
Duration: 5 Nov 20148 Nov 2014

Publication series

NameProceedings - 2014 International Power Electronics and Application Conference and Exposition, IEEE PEAC 2014

Conference

Conference2014 International Power Electronics and Application Conference and Exposition, IEEE PEAC 2014
Country/TerritoryChina
CityShanghai
Period5/11/148/11/14

Keywords

  • DC-DC power converter
  • Gallium nitride
  • Integrated module
  • Layout
  • Parasitic inductance

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