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An improved method of parameter abstraction for a novel diode reverse recovery model in time-domain simulation

  • Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Based on the Lauritzen and Ma model, diode model with reverse recovery characteristic can be built following a modeling procedure presented in the authors' previous paper. But using the original modeling procedure, the diode model will cause large error on peak reverse current in some cases. Defect analysis and improvement of the modeling procedure are present in this paper. By revealing that the averaging of τand TM in different conditions causes the diode model with large error on peak reverse current evaluation, new τand TM derivation method is proposed to improve the modeling procedure. Following the proposed modeling procedure, the diode model can be built and fits in with different implementation in dc-dc converters and PFC circuit. Simulation and hardware tests are done to verify that the diode models with the proposed modeling procedure are greatly improved in the peak reverse current in different implementation cases.

Original languageEnglish
Title of host publication2008 23rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC
Pages1664-1668
Number of pages5
DOIs
StatePublished - 2008
Event2008 23rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC - Austin, TX, United States
Duration: 24 Feb 200828 Feb 2008

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference2008 23rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC
Country/TerritoryUnited States
CityAustin, TX
Period24/02/0828/02/08

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