An improved hybrid photon detector based on a SiC Schottky diode

In order to improve the temporal response of SiC-HPMTs, a new SiC detector with a faster time response (leading edge 1.5 ns, FWHM 4 ns) was developed for constructing an improved SiC-HPMT. Then the properties of the improved SiC-HPMT were studied in detail. Compared with those of the previous SiC-HPMT, the temporal response of the improved SiC-HPMT, with a leading edge of about 2 ns and a FWHM of less than 5ns was effectively improved. The maximum linear current that exceeded 630 mA depends on both the accelerating and focusing voltage (V_a) and the bias voltage (V_SiC) of the SiC detector, but has a strong dependence on V_a. The scintillation detector comprised of the improved SiC-HPMT and an EJ228 scintillator can accurately obtain the multiple peaks characteristic of the pulsed X-ray source, which indicates that the improved SiC-HPMT can well satisfy the requirements for measuring the time information of fast pulsed radiation fields. In addition, the SiC-HPMT should be placed at the position that deviates from the radiation beam to avoid the direct irradiation on the SiC detector. The improved SiC-HPMT will further expand its application in pulsed radiation field measurements and become a supplement for existing photoelectric detectors.