An electrical test method for quality detecting of wafer level eutectic bonding

As the costs of packaging and testing account for a substantial portion of microelectromechanical system (MEMS) devices, an effective and convenient characterization method is urgent to be investigated to lower the cost. In this paper, an electrical test method was utilized, and the test key used for a four-probe current-voltage test was designed to monitor the quality of the AuSn eutectic bonding. The electrical test can directly detect whether or not voids existed in the bonding layer. The difference in alloy state, for example, the existence of the (Au, Ni) ₃Sn₂ phase confirmed by the scanning electron microscope and energy dispersive x-ray spectroscopy test, can also be reflected by resistivity variation. The electrical test can be implemented automatically and conveniently unlike other characterization methods. Therefore, it is suitable to be applied in quality inspection in industrial production.