TY - GEN
T1 - An Auxiliary Power Supply Utilizing Planar Winding Transformer with High Insulation and Low Coupling Capacitance Considerations
AU - Chen, Yong
AU - Song, Xuhui
AU - Zhang, Fan
AU - Zheng, Yuze
AU - Zhang, Xiaolu
AU - Niu, Yukun
AU - Yu, Zheyuan
AU - Wu, Min
AU - Gong, Kaixiang
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - This paper proposes an auxiliary power supply (APS) for medium-voltage SiC MOSFETs with high insulation and low coupling capacitance. Firstly, the mathematical model of the LLC resonant topology is analyzed, and the overall framework of the APS is introduced. In terms of the isolated barrier design, the advantages of printed circuit board (PCB) planar windings are elaborated, and an equivalent capacitance model based on an air-gapped core structure is established, with results indicating a model accuracy exceeding 93%. Finally, a prototype is developed with a coupling capacitance of 1.23 pF. The APS delivers stable gate driver voltages and achieves a peak efficiency of 82.547%. High-voltage testing confirms a PDIV of 24.5 kV DC and a breakdown voltage of 31 kV DC, demonstrating the design's excellent insulation performance and suitability for medium-voltage applications.
AB - This paper proposes an auxiliary power supply (APS) for medium-voltage SiC MOSFETs with high insulation and low coupling capacitance. Firstly, the mathematical model of the LLC resonant topology is analyzed, and the overall framework of the APS is introduced. In terms of the isolated barrier design, the advantages of printed circuit board (PCB) planar windings are elaborated, and an equivalent capacitance model based on an air-gapped core structure is established, with results indicating a model accuracy exceeding 93%. Finally, a prototype is developed with a coupling capacitance of 1.23 pF. The APS delivers stable gate driver voltages and achieves a peak efficiency of 82.547%. High-voltage testing confirms a PDIV of 24.5 kV DC and a breakdown voltage of 31 kV DC, demonstrating the design's excellent insulation performance and suitability for medium-voltage applications.
KW - Auxiliary power supply (APS)
KW - coupling capacitance
KW - PCB planar winding
KW - SiC MOSFETs
UR - https://www.scopus.com/pages/publications/105019932208
U2 - 10.1109/WiPDA-Asia63772.2025.11183925
DO - 10.1109/WiPDA-Asia63772.2025.11183925
M3 - 会议稿件
AN - SCOPUS:105019932208
T3 - 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025
BT - 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025
Y2 - 15 August 2025 through 17 August 2025
ER -