@inproceedings{df43c72813d9460f8925ee7dd29855f1,
title = "An Active Gate Charge Controlled Driver for SiC MOSFET with Zero Turn-off Loss",
abstract = "This paper presents an analysis of the turn-off transient in SiC MOSFETs, deriving the theoretical conditions for achieving zero turn-off loss and calculating the corresponding critical gate resistance value. Based on this analysis, an active gate driver for SiC MOSFETs utilizing gate charge control is proposed. By employing a lower turn-off voltage to enable rapid device turn-off while precisely regulating the extracted gate charge, this method achieves ultra-low turnoff losses without risking gate overvoltage breakdown. A double-pulse test circuit was implemented in LTspice to conduct comparative simulations between the proposed active gate driver and conventional gate driver. Under test conditions of 1 kV/60 A, the proposed active gate driver demonstrated over 90\% reduction in turn-off losses compared to conventional gate diver, while maintaining stable ultra-low loss performance across varying load currents.",
keywords = "SiC MOSFET, active gate driver, gate charge, zero turn-off loss",
author = "Yuze Zheng and Xu Cheng and Fan Zhang and Xiaolu Zhang and Yukun Niu and Xuhui Song",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025 ; Conference date: 15-08-2025 Through 17-08-2025",
year = "2025",
doi = "10.1109/WiPDA-Asia63772.2025.11183990",
language = "英语",
series = "2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025",
}