Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes

P. I. Hsu; H. Gleskova; Z. Suo; S. Wagner; J. C. Sturm

Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes

P. I. Hsu
, H. Gleskova
, Z. Suo
, S. Wagner
, J. C. Sturm

Princeton University

Research output: Contribution to conference › Paper › peer-review

Abstract

The fabrication of thin film transistors (TFT) on metal and plastic substrates and their subsequent plastic deformation was reported. The TFTs fabricated on patterned silicon nitride islands on polyimide substrates were shown to have reduced strain in the semiconductor islands. The devices retained their characteristics after the deformation as the carrier mobility and threshold voltage changed only nominally.

Original language	English
Pages	193-194
Number of pages	2
State	Published - 2001
Externally published	Yes
Event	Device Research Conference (DRC) - Notre Dame, IN, United States Duration: 25 Jun 2001 → 27 Jun 2001

Conference

Conference	Device Research Conference (DRC)
Country/Territory	United States
City	Notre Dame, IN
Period	25/06/01 → 27/06/01

Cite this

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title = "Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes",

abstract = "The fabrication of thin film transistors (TFT) on metal and plastic substrates and their subsequent plastic deformation was reported. The TFTs fabricated on patterned silicon nitride islands on polyimide substrates were shown to have reduced strain in the semiconductor islands. The devices retained their characteristics after the deformation as the carrier mobility and threshold voltage changed only nominally.",

author = "Hsu, \{P. I.\} and H. Gleskova and Z. Suo and S. Wagner and Sturm, \{J. C.\}",

year = "2001",

language = "英语",

pages = "193--194",

note = "Device Research Conference (DRC) ; Conference date: 25-06-2001 Through 27-06-2001",

}

TY - CONF

T1 - Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes

AU - Hsu, P. I.

AU - Gleskova, H.

AU - Suo, Z.

AU - Wagner, S.

AU - Sturm, J. C.

PY - 2001

Y1 - 2001

N2 - The fabrication of thin film transistors (TFT) on metal and plastic substrates and their subsequent plastic deformation was reported. The TFTs fabricated on patterned silicon nitride islands on polyimide substrates were shown to have reduced strain in the semiconductor islands. The devices retained their characteristics after the deformation as the carrier mobility and threshold voltage changed only nominally.

AB - The fabrication of thin film transistors (TFT) on metal and plastic substrates and their subsequent plastic deformation was reported. The TFTs fabricated on patterned silicon nitride islands on polyimide substrates were shown to have reduced strain in the semiconductor islands. The devices retained their characteristics after the deformation as the carrier mobility and threshold voltage changed only nominally.

UR - https://www.scopus.com/pages/publications/0034866850

M3 - 论文

AN - SCOPUS:0034866850

SP - 193

EP - 194

T2 - Device Research Conference (DRC)

Y2 - 25 June 2001 through 27 June 2001

ER -

Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes

Abstract

Conference

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